Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Horst Roeschert"'
Autor:
Klaus Juergen Przybilla, Thomas J. Lynch, Takanori Kudo, Natsumi Suehiro, Walter Spiess, Munirathna Padmanaban, Seiya Masuda, Horst Roeschert, Yoshiaki Kinoshita, Yuko Nozaki, Hiroshi Okazaki, Georg Pawlowski
Publikováno v:
Journal of Photopolymer Science and Technology. 7:461-472
Acetal based deep UV resists, AZ® DX series, are high performance, positive tone deep UV resists consisting of poly(3-methyl, 4- hydroxystyrene-co-4-hydroxystyrene) matrix resin, poly(N, O-acetal) dissolution inhibitor, bis(arylsulfonyl) diazomethan
Publikováno v:
Macromolecules. 26:3862-3869
A three-dimensional cubic percolation field is proposed as a model for the behavior of amphiphilic resins in aqueous bases. From the statistics of this model it is found that the percolation parameter is linearly related to the degree of occupation o
Autor:
Francoise Vinet, Takanori Kudo, Horst Wengenroth, Natusmi Suehiro, Charles Le Cornec, Yoshiaki Kinoshita, Thomas J. Lynch, Seiya Masuda, Thierry Mourier, Yuko Nozaki, Horst Roeschert, John Kochan, Munirathna Padmanaban, Klaus Juergen Przybilla, Hiroshi Okazaki, Gary C. Escher, Georg Pawlowski, Setha G. Olson, Walter Spiess
Publikováno v:
Advances in Resist Technology and Processing XI.
This contribution emphasizes resist application site by communicating lithographic results for AZ DX 46, obtained using the GCA XLS 7800/31 stepper, NA equals 0.53, equipped with krypton fluoride excimer laser ((lambda) equals 248 nm), model 4500 D,
Autor:
Yuko Nozaki, Thomas J. Lynch, Munirathna Padmanaban, Yoshiaki Kinoshita, Horst Wengenroth, Horst Roeschert, Natusmi Suehiro, Takanori Kudo, Walter Spiess, Klaus Juergen Przybilla, Seiya Masuda, Hiroshi Okazaki, Georg Pawlowski
Publikováno v:
Advances in Resist Technology and Processing XI.
AZ DX series are chemically amplified, three component resists based on a poly(4-hydroxystyrene-co-3-methyl-4-hydroxystyrene) matrix resin, a poly(N,O-acetal) dissolution inhibitor, and a bis(arylsulfonyl)diazomethane acid generator. The previously d
Publikováno v:
Advances in Resist Technology and Processing X.
This paper describes some physico-chemical properties and early lithographic results of deep- UV resist systems containing (alpha) -hydroxymethylbenzoin sulfonic acid esters as photoacid generating compounds. (alpha) -Hydroxymethylbenzoin sulfonic ac
Autor:
Takanori Kudo, Yoshiaki Kinoshita, Horst Roeschert, Munirathna Padmanaban, Klaus Juergen Przybilla, Hiroshi Okazaki, Seiya Masuda, Georg Pawlowski, Natusmi Suehiro, Walter Spiess
Publikováno v:
Advances in Resist Technology and Processing X.
This paper describes a newly developed acetal-based positive tone deep UV photoresist called DX 46. The material consists of a 4-hydroxystyrene/4-hydroxy-3-methylstyrene copolymer, a polymeric dissolution inhibitor, and a bleachable diazo-photoactive
Autor:
Walter Spiess, Horst Roeschert, Charlotte Eckes, Hiroshi Okazaki, Takanori Kudo, Horst Wengenroth, Georg Pawlowski, Munirathna Padmanaban, Hajime Endo, Natusmi Suehiro, Klaus Juergen Przybilla, Yoshiaki Kinoshita, Seiya Masuda
Publikováno v:
Advances in Resist Technology and Processing X.
This paper presents some methods for the investigation of delay time I3 induced effects typical of an advanced acetal-based photoresist, and strategies to improve the latent image stability. Dissolution rate monitoring was used to investigate the inc
Publikováno v:
Advances in Resist Technology and Processing X.
A scaling law derived from percolation theory for thedissolution of phenolic resins in aqueous base is tested and confirmed on seven groups of amphiphilic resins. The scaling law can be presented in thedimensionless formlog(R/R ) = 2 log[(p p)/(1 —
Hexafluoroacetone in resist chemistry: a versatile new concept for materials for deep-UV lithography
Publikováno v:
SPIE Proceedings.
Starting from general arguments on hexafluoroacetone chemistry, an exploratory investigation of the utility of this new type of resist chemistry is presented. The 2- hydroxyhexafluoroisopropyl-group (HHFIP) proves to be comparable to phenolic groups
Autor:
Georg Pawlowski, Horst Roeschert, Ralph R. Dammel, Walter Spiess, Winfried Meier, K. Kamiya, Charlotte Eckes, Klaus Juergen Przybilla
Publikováno v:
SPIE Proceedings.
Advanced negative photoresists for both KrF-excimer laser lithography (DN 21) and deep-UV broadband irradiation (DN 41) have been investigated. The materials are based on the well established chemistry of an acid-sensitive melamine derivative as the