In situ X-ray diffraction study of self-forming barriers from a Cu–Mn alloy in 100 nm Cu/low- k damascene interconnects using synchrotron radiation

Autor: Wilson, Christopher J., Volders, Henny, Croes, Kristof, Pantouvaki, Marianna, Beyer, Gerald P., Horsfall, Alton B., O’Neill, Anthony G., Tőkei, Zsolt

Publikováno v: In Microelectronic Engineering 2010 87(3):398-401

3D structures for silicon carbide transistors utilising Al2O3 as a gate dielectric

Autor: Idris, M. Idzdihar, Horsfall, Alton B.

Publikováno v: Materials Science in Semiconductor Processing, 2021, Vol.128, pp.105727 [Peer Reviewed Journal]

This paper reports on the first investigation of the characteristics of 3D structures formed in silicon carbide for the realisation of ultra-high performance nanoscale transistors, based on the FINFET topology. Capacitance–voltage characteristics s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______328::19d0a942abc90e42141dd84ce9cf088b
https://doi.org/10.1016/j.mssp.2021.105727

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Synchrotron measurement of the effect of linewidth scaling on stress in advanced Cu/Low-k interconnects.

Autor: Wilson, Christopher J., Croes, Kristof, Zhao, Chao, Metzger, Till H., Zhao, Larry, Beyer, Gerald P., Horsfall, Alton B., O'Neill, Anthony G., Tőkei, Zsolt

Publikováno v: Journal of Applied Physics; Sep2009, Vol. 106 Issue 5, p053524-1-053524-7, 7p, 5 Black and White Photographs, 3 Diagrams, 1 Chart, 7 Graphs

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