Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Horsell, D. W."'
Publikováno v:
Phys. Rev. B 85, 161411(R) (2012)
We have experimentally studied the nonlinear nature of electrical conduction in monolayer graphene devices on silica substrates. This nonlinearity manifests itself as a nonmonotonic dependence of the differential resistance on applied DC voltage bias
Externí odkaz:
http://arxiv.org/abs/1202.3394
Publikováno v:
Phys. Rev. B 86, 045436 (2012)
We measure the dependence of the conductivity of graphene as a function of magnetic field, temperature and carrier density and discover a saturation of the dephasing length at low temperatures that we ascribe to spin memory effects. Values of the spi
Externí odkaz:
http://arxiv.org/abs/1108.2067
Publikováno v:
Phys. Rev. B 85, 075435 (2012) [5 pages]
We experimentally study the effect of different scattering potentials on the flicker noise observed in graphene devices on silica substrates. The noise in nominally identical devices is seen to behave in two distinct ways as a function of carrier con
Externí odkaz:
http://arxiv.org/abs/1107.3488
Publikováno v:
Phys. Rev. B 83, 121404(R) (2011)
Near infrared pump-probe spectroscopy has been used to measure the ultrafast dynamics of photoexcited charge carriers in monolayer and multilayer graphene. We observe two decay processes occurring on 100 fs and 2 ps timescales. The first is attribute
Externí odkaz:
http://arxiv.org/abs/1012.3927
Autor:
Kaverzin, A. A., Strawbridge, S. M., Price, A. S., Withers, F., Savchenko, A. K., Horsell, D. W.
The electrical properties of graphene are known to be modified by chemical species that interact with it. We investigate the effect of doping of graphene-based devices by toluene (C6H5CH3). We show that this effect has a complicated character. Toluen
Externí odkaz:
http://arxiv.org/abs/1010.4763
Autor:
Horsell, D. W., Savchenko, A. K., Tikhonenko, F. V., Kechedzhi, K., Lerner, I. V., Fal'ko, V. I.
We study fluctuations of the conductance of micron-sized graphene devices as a function of the Fermi energy and magnetic field. The fluctuations are studied in combination with analysis of weak localization which is determined by the same scattering
Externí odkaz:
http://arxiv.org/abs/0902.0904
Autor:
Kechedzhi, K., Horsell, D. W., Tikhonenko, F. V., Savchenko, A. K., Gorbachev, R. V., Lerner, I. V., Fal'ko, V. I.
Publikováno v:
Phys. Rev. Lett. 102, 066801 (2009)
We propose a method of measuring the electron temperature $T_e$ in mesoscopic conductors and demonstrate experimentally its applicability to micron-size graphene devices in the linear-response regime ($T_e\approx T$, the bath temperature). The method
Externí odkaz:
http://arxiv.org/abs/0808.3211
Publikováno v:
Nano Lett. 8, 1995 (2008)
We have fabricated graphene devices with a top gate separated from the graphene layer by an air gap--a design which does not decrease the mobility of charge carriers under the gate. This gate is used to realise p-n-p structures where the conducting p
Externí odkaz:
http://arxiv.org/abs/0804.2081
We report the first experimental study of the quantum interference correction to the conductivity of bilayer graphene. Low-field, positive magnetoconductivity due to the weak localisation effect is investigated at different carrier densities, includi
Externí odkaz:
http://arxiv.org/abs/0708.1700
Publikováno v:
Phys. Rev. Lett. 100, 056802 (2008)
We show that the manifestation of quantum interference in graphene is very different from that in conventional two-dimensional systems. Due to the chiral nature of charge carriers, it is sensitive not only to inelastic, phase-breaking scattering, but
Externí odkaz:
http://arxiv.org/abs/0707.0140