Zobrazeno 1 - 10
of 217
pro vyhledávání: '"Horn, Karsten"'
Autor:
Yoo, Hyang Keun, Moreschini, Luca, Walter, Andrew L., Bostwick, Aaron, Horn, Karsten, Rotenberg, Eli, Chang, Young Jun
Publikováno v:
Current Applied Physics 20, 1268 (2020)
Two-dimensional electron gases (2DEGs) on the SrTiO3 (STO) surface or in STO-based heterostructures have exhibited many intriguing phenomena, which are strongly dependent on the 2DEG-carrier density. We report that the tunability of the 2DEG-carrier
Externí odkaz:
http://arxiv.org/abs/2105.06059
Autor:
Nagamura, Naoka, Fukidome, Hirokazu, Nagashio, Kosuke, Horiba, Koji, Ide, Takayuki, Funakubo, Kazutoshi, Tashima, Keiichiro, Toriumi, Akira, Suemitsu, Maki, Horn, Karsten, Oshima, Masaharu
Publikováno v:
Carbon 152 680-687 (2019)
The linear band dispersion of graphene's bands near the Fermi level gives rise to its unique electronic properties, such as a giant carrier mobility, and this has triggered extensive research in applications, such as graphene field-effect transistors
Externí odkaz:
http://arxiv.org/abs/1907.03310
Autor:
Voloshina, Elena, Guo, Qilin, Paulus, Beate, Böttcher, Stefan, Vita, Hendrik, Horn, Karsten, Zhao, Changbao, Cui, Yi, Dedkov, Yuriy
Publikováno v:
J. Phys. Chem. C 123, 4994 (2019)
Experimental and theoretical studies of manganese deposition on graphene/Ni(111) shows that a thin ferromagnetic Ni3Mn layer, which is protected by the graphene overlayer, is formed upon Mn intercalation. The electronic bands of graphene are affected
Externí odkaz:
http://arxiv.org/abs/1902.02045
Autor:
Bog, Manuela, Inoue, Maho, Klahr, Anja, Fuchs, Jörg, Ivanenko, Yuri, Hori, Kiyotaka, Horn, Karsten, Wilfried Bennert, H., Schnittler, Martin
Publikováno v:
In Molecular Phylogenetics and Evolution October 2022 175
Akademický článek
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Autor:
Horn, Karsten.
Braunschweig, Techn. Universiẗat, Diss., 1999.
Externí odkaz:
http://www.biblio.tu-bs.de/ediss/data/19991111a/19991111a.pdf
http://deposit.ddb.de/cgi-bin/dokserv?idn=957868073
http://deposit.ddb.de/cgi-bin/dokserv?idn=957868073
Autor:
Walter, Andrew L., Bostwick, Aaron, Speck, Florian, Ostler, Markus, Kim, Keun Su, Chang, Young Jun, Moreschini, Luca, Innocenti, Davide, Seyller, Thomas, Horn, Karsten, Rotenberg, Eli
Interest in the use of graphene in electronic devices has motivated an explosion in the study of this remarkable material. The simple, linear Dirac cone band structure offers a unique possibility to investigate its finer details by angle-resolved pho
Externí odkaz:
http://arxiv.org/abs/1209.4744
Autor:
Walter, Andrew L., Nie, Shu, Bostwick, Aaron, Kim, Keun Su, Moreschini, Luca, Chang, Young Jun, Innocenti, Davide, Horn, Karsten, McCarty, Kevin F., Rotenberg, Eli
The electronic structure of graphene on Cu(111) and Cu(100) single crystals is investigated using low energy electron microscopy, low energy electron diffraction and angle resolved photoemission spectroscopy. On both substrates the graphene is rotati
Externí odkaz:
http://arxiv.org/abs/1108.2066
Autor:
Walter, Andrew L., Bostwick, Aaron, Jeon, Ki-Joon, Speck, Florian, Ostler, Markus, Seyller, Thomas, Moreschini, Luca, Chang, Young Jun, Polini, Marco, Asgari, Reza, MacDonald, Allan H., Horn, Karsten, Rotenberg, Eli
Electron-plasmon coupling in graphene has recently been shown to give rise to a "plasmaron" quasiparticle excitation. The strength of this coupling has been predicted to depend on the effective screening, which in turn is expected to depend on the di
Externí odkaz:
http://arxiv.org/abs/1107.4398
Autor:
Walter, Andrew L., Jeon, Ki-Joon, Bostwick, Aaron, Speck, Florian, Ostler, Markus, Seyller, Thomas, Moreschini, Luca, Kim, Yong Su, Chang, Young Jun, Horn, Karsten, Rotenberg, Eli
We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene, but rather saturate the substrate Si bonds. This co
Externí odkaz:
http://arxiv.org/abs/1104.2812