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This study proposes a simulation-based design for a Silicon-On-Insulator (SOI) ring resonator with a Figure of Merit (FOM) of 56.15 and a high sensitivity of up to 730 nm/RIU. The Finite-Difference Time-Domain (FDTD) technique was used to assess and
Externí odkaz:
http://arxiv.org/abs/2312.02304
Publikováno v:
In Heliyon 29 February 2024 10(4)
