Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Hoong-Joo Lee"'
Autor:
Hoong-Joo Lee
Publikováno v:
Journal of the Korea Academia-Industrial cooperation Society. 10:2221-2226
This paper presents the design of the LED sign board system installed on the exterior of a building and powered by a photovoltaic system. A grid connected photovoltaic system has been designed with the capacity estimate of the load, battery and power
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4188d393fcb8ebfff1b1a033a10b1157
https://doi.org/10.5762/kais.2009.10.9.2221
https://doi.org/10.5762/kais.2009.10.9.2221
Autor:
Hoong-Joo Lee
Publikováno v:
Journal of the Korea Academia-Industrial cooperation Society. 9:1614-1618
This paper propose a novel yield difference model according to layout modification. The difference of average number of faults by layout modification to increase or decrease spaces between geometries is formulated for short faults and open faults. Co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33c5ab16e0788f827895883204a348e5
https://doi.org/10.5762/kais.2008.9.6.1614
https://doi.org/10.5762/kais.2008.9.6.1614
Autor:
Hoong Joo Lee, Jun Ha Lee, Jeong Won Kang, Oh Keun Kwon, Young-Jin Song, Ho Jung Hwang, Young-Sik Yoon
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 33:41-49
We have performed static and dynamic analyses of nanoelectromechanical (NEM) carbon nanotube (CNT) memory devices called nanotube random access memory (NRAM). In static analyses, the current–voltage ( I–V ) curves showed the hysteresis characteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e4f3c4cabe67522c676f321b8021866
https://doi.org/10.1016/j.physe.2005.10.013
https://doi.org/10.1016/j.physe.2005.10.013
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 28:273-280
A carbon-nanotube (CNT)-bridge nanoelectromechanical memory device was investigated by using two-dimensional model based on electrostatic and elastostatic theories. The nanotube-bridge memory device was operated by the electrostatic, the elastostatic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9bc01441559c928d4ef12e25c4a55fd
https://doi.org/10.1016/j.physe.2005.03.016
https://doi.org/10.1016/j.physe.2005.03.016
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 27:332-340
A nanoelectromechanical (NEM) nanotube random access memory (NRAM) device based on carbon nanotube (CNT) was investigated using atomistic simulations. For the CNT-based NEM memory, the mechanical properties of the CNT-bridge and van der Waals interac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::017f9ed16b55644c57e25e1099d3847f
https://doi.org/10.1016/j.physe.2004.12.009
https://doi.org/10.1016/j.physe.2004.12.009
Autor:
Jun-Ha Lee, Hoong-Joo Lee
Publikováno v:
Transactions on Electrical and Electronic Materials. 6:1-5
Continued scaling of MOS devices requires the formation of the ultra shallow and very heavily doped junction. The simulation and experiment results show that the degradation of pMOS performance in logic and SRAM pMOS devices due to the excessive diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bc0bcdeb9cb7b7aace5e1932e0ba28d
https://doi.org/10.4313/teem.2005.6.1.001
https://doi.org/10.4313/teem.2005.6.1.001
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 25:347-355
We have investigated model schematics for a long fine single-wall carbon nanotube growth inside a larger diameter nanotube. Our proposed schematics are as follows: fullerenes are encapsulated into the nano-channel connected with fullerene storage tan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6be36712d37a19dd82c1ae9b0de3106
https://doi.org/10.1016/j.physe.2004.06.051
https://doi.org/10.1016/j.physe.2004.06.051
Autor:
Hoong-Joo Lee, Jun-Ha Lee
Publikováno v:
Transactions on Electrical and Electronic Materials. 5:180-184
This paper proposes a novel methodology of systematic global calibration and validates its accuracy and efficiency with application to memory and logic devices. With 175 SIMS profiles which cover the range of conditions of implant and diffusion proce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24d727b3b6bc90f69c3fc823e9131a63
https://doi.org/10.4313/teem.2004.5.5.180
https://doi.org/10.4313/teem.2004.5.5.180
Autor:
Jun-Ha Lee, Hoong-Joo Lee
Publikováno v:
Transactions on Electrical and Electronic Materials. 5:104-108
Problems of overlap errors and side-lobe printing by the design rule reduction in the lithography process using attenuated phase-shifting masks(attPSM) have been serious. Overlap errors and side-lobes can be simultaneously solved by the rule-based co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8fa04b5013ba16e508a07e79819841a
https://doi.org/10.4313/teem.2004.5.3.104
https://doi.org/10.4313/teem.2004.5.3.104
