Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Hoon-Soo Park"'
Publikováno v:
In Water Research 2001 35(14):3515-3515
Autor:
Jin-Gun Koo, Jong-Il Won, Yil-Suk Yang, Hoon-Soo Park, Jong-Moon Park, Sang-Gi Kim, Tae-moon Roh
Publikováno v:
Journal of IKEEE. 20:220-225
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c28957595ee48d0aacc685f60c10975c
https://doi.org/10.7471/ikeee.2016.20.3.220
https://doi.org/10.7471/ikeee.2016.20.3.220
Autor:
Jinho Lee, Kyoung Il Na, Jin Gun Koo, Jong-Il Won, Sang Hoon Chai, Sang Gi Kim, Seong Wook Yoo, Hyung-Moo Park, Yil Suk Yang, Hoon Soo Park
Publikováno v:
ETRI Journal. 35:632-637
In this paper, we propose a superjunction trench gate MOSFET (SJ TGMOSFET) fabricated through a simple p-pillar forming process using deep trench and boron silicate glass doping process technology to reduce the process complexity. Throughout the vari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fa7348d1ee3bc49d510cd1b068f7b28
https://doi.org/10.4218/etrij.13.1912.0012
https://doi.org/10.4218/etrij.13.1912.0012
Autor:
Yil Suk Yang, Kyoung Il Na, Jong Dae Kim, Jin Gun Koo, Dong Ha Kah, Hoon Soo Park, Jin Ho Lee, Sang Gi Kim
Publikováno v:
Journal of the Korean Physical Society. 60:1552-1556
Gate dielectrics in trench structures for trench gate metal oxide semiconductor field-effect transistor (MOSFET) power devices are very important to realize excellent characteristics. In this paper we describe multiple-layer gate dielectrics for tren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aaaa1dfc3273761fde941ce4ac60218a
https://doi.org/10.3938/jkps.60.1552
https://doi.org/10.3938/jkps.60.1552
Publikováno v:
Journal of the Korean Physical Society. 57:802-805
We propose a novel process technology for fabricating a very high density n-channel trench-gate metal oxide silicon field effect transistor (MOSFET) by using an oxide spacer and self-aligned techniques. Due to this nano-scale technology, the cell pit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22d50c7aa0e40f6a7bcc585ffb8c4119
https://doi.org/10.3938/jkps.57.802
https://doi.org/10.3938/jkps.57.802
Publikováno v:
Journal of the Korean Physical Society. 55:982-985
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::862adfccaeab6f1c7e5fcaf5aadfefc8
https://doi.org/10.3938/jkps.55.982
https://doi.org/10.3938/jkps.55.982
Autor:
Hoon-Soo Park
Publikováno v:
Current Applied Physics. 10:419-421
To improve the breakdown voltage, we propose a SOI-based LDMOSFET with a trench structure in the drift region. Due to the trench oxide and underneath boron implanted layer, the surface electric field in the drift region effectively reduced. These eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4c8b236826a451cd4daa300b1751556
https://doi.org/10.1016/j.cap.2009.06.057
https://doi.org/10.1016/j.cap.2009.06.057
Autor:
Jong Dae Kim, Jin Gun Koo, Yong Hyun Lee, Bo Woo Kim, Hoon Soo Park, Jin Yeong Kang, Tae Moon Rho, Sang Gi Kim
Publikováno v:
Thin Solid Films. 517:4204-4206
This paper describes a simple, on-chip complimentary metal oxide semiconductor (CMOS) compatible thin-film inductor applied for the dc–dc converters. The double rectangular spiral types of the thin-film inductors were implemented with 15 µm-thick
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aff8776487557c0fec4c0c93f56f4bd7
https://doi.org/10.1016/j.tsf.2009.02.019
https://doi.org/10.1016/j.tsf.2009.02.019
Autor:
Sang-Gi Kim, Hoon Soo Park Park, Dae Yong Kim Kim, Jongdae Kim Kim, Tae Moon Roh Roh, Jin-Gun Koo Koo
Publikováno v:
ETRI Journal. 21:22-28
A new tapered TEOS oxide technique has been developed to use field oxide of the power integrated circuits. It provides better uniformity of less than 3 % and reproducibility. On-resistance of P-channel RESURF (REduced SURface Field) LDMOS transistors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a72f622641a5e53a19a7f001c71feaae
https://doi.org/10.4218/etrij.99.0199.0304
https://doi.org/10.4218/etrij.99.0199.0304
Publikováno v:
International Journal of Electronics. 86:269-279
The dynamic resistance of a heavily doped semiconductor resistor was evaluated by observing the electrical mobility and conductivity of the resistor as a function of temperature. It is known for the first time that the silicon resistor presents a PTC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7cfada40232d14681507ae01aa7a96a
https://doi.org/10.1080/002072199133409
https://doi.org/10.1080/002072199133409