Zobrazeno 1 - 10
of 198
pro vyhledávání: '"Hoon-Kyu Shin"'
Autor:
Minwho Lim, Constantin Csato, Julietta Förthner, Oleg Rusch, Kevin Ehrensberger, Barbara Kupfer, Susanne Beuer, Susanne Oertel, Dong Wook Byun, Seong Jun Kim, Sang Mo Koo, Hoon Kyu Shin, Tobias Erlbacher
Publikováno v:
Key Engineering Materials. 945:55-59
In this paper, the modeling of SJ-MOSFETs beyond the voltage class of 3.3 kV simulated with verified deep aluminum box-like shaped profiles by using TCAD simulation is described. The simulation results are used to investigate the influence of ion imp
Autor:
Dong Ick SON, Young Jae Park, Jaeho Shim, Joo Song Lee, Kyu Seung Lee, Dong Su Shin, Kang Bok Ko, Sang-Youp Yim, Seongjun Kim, Hoon-Kyu Shin, Donghee Park, Yong Ju Yun
Mixed-dimensional composite structures using 0D quantum dots (QDs) and 2D transition metal dichalcogenides (TMDs) materials are expected to attract great interest in optoelectronics due to potential to generate new optical properties. Here, we report
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::930cbb55093d5da23a34cc10c80fde79
https://doi.org/10.21203/rs.3.rs-2751403/v1
https://doi.org/10.21203/rs.3.rs-2751403/v1
Publikováno v:
Journal of Nanoscience and Nanotechnology. 20:4657-4660
An isomeric series of phosphine oxides with N-phenyl benzimidazole such as 2-DPPI, 3-DPPI and 4-DPPI were synthesized for organic light emitting diodes (OLED). The thermal properties of DPPI isomers were determined by thermogravimetric analysis (TGA)
Autor:
Anton J. Bauer, Min Who Lim, Hoon Kyu Shin, Mathias Rommel, Hong-Ki Kim, Tomasz Sledziewski, Tobias Erlbacher, Seongjun Kim
Publikováno v:
Materials Science Forum. 1004:535-540
In this work, the influence of pre-deposition interfacial oxidation or post-deposition interface nitridation on the performance of 4H-SiC MOS capacitors was investigated. The gate oxide was deposited by LPCVD using TEOS as a precursor. Interface brea
Autor:
Min-Sik Kang, Seongjun Kim, Anton J. Bauer, Hyun-Chul Kim, Tobias Erlbacher, Min-Jae Kang, Tran Viet Cuong, Nam-Suk Lee, Hong-Ki Kim, Hoon-Kyu Shin, Seonghoon Jeong, Minwho Lim
Publikováno v:
Journal of Nanomaterials, Vol 2019 (2019)
In this work, the ohmic contact mechanism of Ni electrodes on C-faced 4H-n-SiC was investigated by evaluating the electrical and microstructural properties in the contact interface as a function of annealing temperatures ranging from 950 to 1100°C.
Publikováno v:
Journal of Nanoscience and Nanotechnology. 19:4791-4794
Amyloid β (Aβ) peptide is secreted from the outside of neural cell by a neural signal pathway and it accumulated each other results in the highly toxicity amyloid plaque which is a critical causative factor in the pathogenesis of Alzheimer's Diseas
Autor:
Anton J. Bauer, Tobias Erlbacher, Seongjun Kim, Jonas Buettner, Nam-Suk Lee, Min Who Lim, Sang Mo Koo, Hoon Kyu Shin, Hong-Ki Kim
Publikováno v:
Materials Science Forum. 963:429-432
In this study, Al and N implantation effect on surface properties of 4H-SiC epitaxial layers were investigated before annealing process. AFM results indicated that all implanted samples indicated relatively low RMS roughness values. From UPS and XPS
Publikováno v:
Journal of Nanoscience and Nanotechnology. 19:1786-1789
Amyloid β (Aβ) is considered to be one of a potential biomarker to monitor Alzheimer's Disease (AD) not only for diagnostic purposes but for early detection. Here we describe a novel nano-biosensor for Aβ mediated by poly-L-lysine (PLL) which was
Autor:
Joo-Heon Song, Kyu-Hyon Son, Sung-Woong Han, Min-Sik Kang, Sang-Mok Chang, Hoon-Kyu Shin, Dong-Eun Kim, Jung-Hun Kim, Moon-Soo Choi
Publikováno v:
Journal of nanoscience and nanotechnology. 20(8)
Additive manufacturing or three-dimensional (3D) printing is considered a disruptive technology for producing components with topologically optimized complex geometries as well as functionalities that are not achievable by traditional methods. 3D pri
Publikováno v:
Nanoscale. 12(15)
To understand the relationship between the work function and structural properties of sufficiently expanded triangular defects (size: ∼250 μm) in the 4H-SiC epitaxial layer, Kelvin probe force microscopy (KPFM) and spectroscopic [micro-Raman spect