Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Hoon-Jung Oh"'
Publikováno v:
Molecules, Vol 25, Iss 4, p 785 (2020)
An amorphous Si (a-Si) solar cell with a back reflector composed of zinc oxide (ZnO) and silver (Ag) is potentially the most plausible and flexible solar cell if a graphite sheet is used as the substrate. Graphite supplies lightness, conductivity and
Externí odkaz:
https://doaj.org/article/6db011f603e649208ebc2128069af9a7
Autor:
Gwihyun Kim, Seran Park, Hyunsu Shin, Seungho Song, Hoon-Jung Oh, Dae Hong Ko, Jung-Il Choi, Seung Jae Baik
Publikováno v:
AIP Advances, Vol 7, Iss 12, Pp 125310-125310-12 (2017)
Atmospheric pressure (AP) operation of plasma-enhanced chemical vapor deposition (PECVD) is one of promising concepts for high quality and low cost processing. Atmospheric plasma discharge requires narrow gap configuration, which causes an inherent f
Externí odkaz:
https://doaj.org/article/ed46d98652ec4b8b9d1048ee019c116c
Autor:
Kyu Dong Kim, Jin Gu Park, Min Seon Lee, Joohee Lee, Dae Hong Ko, Woo Gon Shin, In Geun Lee, Hoon Jung Oh
Publikováno v:
Journal of Nanoscience and Nanotechnology. 16:4808-4813
The effects of dry cleaning of a HfO2 gate stack using NF3 only and a NF3/NH3 gas mixture plasma were investigated. The plasma dry cleaning process was carried out after HfO2 deposition using an indirect down-flow capacitively coupled plasma (CCP) sy
Publikováno v:
Molecules, Vol 25, Iss 4, p 785 (2020)
Molecules
Volume 25
Issue 4
Molecules
Volume 25
Issue 4
An amorphous Si (a-Si) solar cell with a back reflector composed of zinc oxide (ZnO) and silver (Ag) is potentially the most plausible and flexible solar cell if a graphite sheet is used as the substrate. Graphite supplies lightness, conductivity and
Autor:
Woo Gon Shin, In Geun Lee, Sung Yong Kang, Joohee Lee, Dae Hong Ko, Hoon Jung Oh, Min Seon Lee
Publikováno v:
ECS Transactions. 64:11-16
HfO2 has been one of the most important subjects of intensive research in recent years due to its outstanding material properties making it suitable for several industrial applications in the field of semiconductor electronics, especially for the hig
Autor:
In Geun Lee, Hoon Jung Oh, Joohee Lee, Sung Yong Kang, Woo Gon Shin, Min Seon Lee, Dae Hong Ko
Publikováno v:
Solid State Phenomena. 219:11-15
HfO2 gate stack has been one of the most popular subjects of research in recent years due to its outstanding material properties, such as high-k (20~25), wide band gap (~5.68eV), and the compatibility with Si-based semiconductor process technology. H
Autor:
Min-Seon, Lee, Hoon-Jung, Oh, Joo-Hee, Lee, In-Geun, Lee, Woo-Gon, Shin, Kyu-Dong, Kim, Jin-Gu, Park, Dae-Hong, Ko
Publikováno v:
Journal of nanoscience and nanotechnology. 16(5)
The effects of dry cleaning of a HfO2 gate stack using NF3 only and a NF3/NH3 gas mixture plasma were investigated. The plasma dry cleaning process was carried out after HfO2 deposition using an indirect down-flow capacitively coupled plasma (CCP) sy
Autor:
Seung Jae Baik, Seran Park, Hoon Jung Oh, Hyunsu Shin, Jung Il Choi, Seungho Song, Gwihyun Kim, Dae Hong Ko
Publikováno v:
AIP Advances, Vol 7, Iss 12, Pp 125310-125310-12 (2017)
Atmospheric pressure (AP) operation of plasma-enhanced chemical vapor deposition (PECVD) is one of promising concepts for high quality and low cost processing. Atmospheric plasma discharge requires narrow gap configuration, which causes an inherent f
Publikováno v:
IEEE Electron Device Letters. 29:977-980
A high-performance In0.53Ga0.47As n-channel MOSFET integrated with a HfAlO gate dielectric and a TaN gate electrode was fabricated using a self-aligned process. After HCl cleaning and (NH4)2S treatment, the chemical vapor deposition HfAlO growth on I
Autor:
Wei Yip Loh, Byung Jin Cho, Patrick Lo, Hoai Son Nguyen, Hoon Jung Oh, Kyu Jin Choi, Hui Zang
Publikováno v:
ECS Transactions. 6:105-110
We report a novel Si/Si1-xGex channel with improved current drivability and reliability using a buried Si0.99C0.01. It is also found that the Si/Si1-xGex/Si0.99C0.01 structure is effective in reducing Ge out-diffusion which helps to improve gate diel