Zobrazeno 1 - 10
of 220
pro vyhledávání: '"Honolka, J"'
Autor:
Volny, J., Holy, V., Charvatova, K., Veis, M., Vondracek, M., Honolka, J., Duverger-Nedellec, E., Schusser, J., D'Souza, S. W., Minar, J., Pientka, J. M., Marmodoro, A., Vyborny, K., Uhlirova, K.
Publikováno v:
Phys. Rev. B 105 (2022) 125204
We report synthesis of single crystalline NaMnAs, confirm its antiferromagnetic order and characterise the sample by photoemission spectroscopy. The electronic structure was studied using optical transmittance, x-ray and ultraviolet spectroscopy and
Externí odkaz:
http://arxiv.org/abs/2109.03348
Electronic properties of Fe impurities in SnS van der Waals crystals – Revealing high-mobility holes
Autor:
Navrátil, J., Caha, O., Kopeček, J., Čermák, P., Prokleška, J., Holý, V., Sechovský, V., Beneš, L., Carva, K., Honolka, J., Drašar, Č.
Publikováno v:
In Materials Science & Engineering B March 2024 301
Autor:
Honolka, J., Krotzky, S., Menzel, M., Herden, T., Sessi, V., Ebert, H., Minar, J., von Bergmann, K., Wiesendanger, R., Sipr, O.
Publikováno v:
Phys. Rev. B 103, 174419 (2021)
The noncollinear magnetic state of epitaxial Mn monolayers on tungsten (110) crystal surfaces is investigated by means of soft x-ray absorption spectroscopy, to complement earlier spin-polarized STM experiments. X-ray absorption spectra (XAS), x-ray
Externí odkaz:
http://arxiv.org/abs/2012.01729
Autor:
Carva, K., Baláž, P., Šebesta, J., Turek, I., Kudrnovský, J., Máca, F., Drchal, V., Chico, J., Sechovský, V., Honolka, J.
Publikováno v:
Phys. Rev. B 101, 054428 (2020)
Doping Bi$_2$Se$_3$ by magnetic ions represents an interesting problem since it may break the time reversal symmetry needed to maintain the topological insulator character. Mn dopants in Bi$_2$Se$_3$ represent one of the most studied examples here. H
Externí odkaz:
http://arxiv.org/abs/2001.04366
Akademický článek
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Autor:
Tkáč, V., Výborný, K., Komanický, V., Warmuth, J., Michiardi, M., Ngankeu, A. S., Vališka, R. Tarasenko M., Stetsovych, V., Carva, K., Garate, I., Bianchi, M., Wiebe, J., Holý, V., Hofmann, Ph., Springholz, G., Sechovský, V., Honolka, J.
Publikováno v:
Phys. Rev. Lett. 123, 036406 (2019)
Magnetotransport constitutes a useful probe to understand the interplay between electronic band topology and magnetism in spintronics devices based on topological materials. A recent theory of Lu and Shen [Phys. Rev. Lett. 112, 146601 (2014)] on magn
Externí odkaz:
http://arxiv.org/abs/1806.10014
Autor:
Savchenko, D., Tarasenko, R., Vališka, M., Kopeček, J., Fekete, L., Carva, K., Holý, V., Springholz, G., Sechovský, V., Honolka, J.
We compare the magnetic and electronic configuration of single Mn atoms in molecular beam epitaxy (MBE) grown Bi$_2$Se$_3$ thin films, focusing on electron paramagnetic (ferromagnetic) resonance (EPR and FMR, respectively) and superconducting quantum
Externí odkaz:
http://arxiv.org/abs/1707.00975
Autor:
Vondracek, M., Kucera, M., Fekete, L., Kopecek, J., Lancok, J., Kalita, D., Coraux, J., Bouchiat, V., Honolka, J.
Publikováno v:
Scientific Reports 6, Article number: 23663 (2016)
The exceptional electronic properties of monoatomic thin graphene sheets triggered numerous original transport concepts, pushing quantum physics into the realm of device technology for electronics, optoelectronics and thermoelectrics. At the conceptu
Externí odkaz:
http://arxiv.org/abs/1604.00471
Non-magnetic ground state of Ni adatoms on Te-terminated bismuth chalcogenide topological insulators
Autor:
Vondracek, M., Honolka, J., Cornils, L., Warmuth, J., Zhou, L., Kamlapure, A., Khajetoorians, A. A., Wiesendanger, R., Wiebe, J., Michiardi, M., Bianchi, M., Miwa, J., Barreto, L., Hofmann, P., Piamonteze, C., Minar, J., Mankovsky, S., Borek, St., Ebert, H., Schueler, M., Wehling, T., Mi, J. -L., Iversen, B. -B.
Publikováno v:
Phys. Rev. B 94, 161114 (2016)
We report on the quenching of single Ni adatom moments on Te-terminated Bi2Te2Se and Bi2Te3 topological insulator surfaces. The effect becomes manifested as a missing X-ray magnetic circular dichroism for resonant L3,2 transitions into partially fill
Externí odkaz:
http://arxiv.org/abs/1603.09689
Autor:
Carva, K., Kudrnovský, J., Máca, F., Drchal, V., Turek, I., Baláž, P., Tkáč, V., Holý, V., Sechovský, V., Honolka, J.
Publikováno v:
Phys. Rev. B 93, 214409 (2016)
We present a first-principles study of the electronic, magnetic, and transport properties of the topological insulator Bi$_{2}$Te$_{3}$ doped with Mn atoms in substitutional (Mn$_{\rm Bi}$) and interstitial van der Waals gap positions (Mn$_{\rm i}$),
Externí odkaz:
http://arxiv.org/abs/1603.08811