Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Hongyue Zhu"'
Publikováno v:
Frontiers in Psychology, Vol 11 (2021)
Multilevel item response theory (MLIRT) models are used widely in educational and psychological research. This type of modeling has two or more levels, including an item response theory model as the measurement part and a linear-regression model as t
Externí odkaz:
https://doaj.org/article/cef58faa7e1540d2896da169845fd0c2
Autor:
Zhongxue Fang, Yujie Zhang, Yongsheng Guo, Qihao Jin, Hongyue Zhu, Hongsen Xiu, Zhenhua Liu, Yu Wang
Publikováno v:
New Journal of Chemistry. 46:18124-18127
The [4+1] cyclization reaction of 2-hydroxylimides and trimethylsulfoxonium iodide was investigated.
Publikováno v:
Separation and Purification Technology. 320:124122
Publikováno v:
IEEE Transactions on Industrial Electronics. 68:7545-7555
Insulated gate bipolar transistor (IGBT) collector current measurement based on the package parasitics between the power emitter ( E ) and the Kelvin emitter ( E′ ) is a lossless and real-time monitoring method. A step to improve accuracy is to pre
Autor:
Jian-Zhong Yin, Hongyue Zhu
Publikováno v:
Journal of Chemical & Engineering Data. 66:347-359
In the presence of ethanol (EtOH), supercritical carbon dioxide (scCO2) microemulsions containing 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([Emim][Tf2N]) ionic liquid (IL) base...
Publikováno v:
Chinese Journal of Chemical Engineering. 27:2653-2658
Supercritical carbon dioxide microemulsions are great medium to combine two immiscible substances through forming nanoscale polar cores in nonpolar continuous phase with the help of proper surfactants. The properties of microemulsions could be signif
Publikováno v:
IEEE Transactions on Power Electronics. 34:3615-3622
This paper presents a new insulated gate bipolar transistor (IGBT) over-current detection method based on the analysis of the gate voltage waveform. The IGBT's gate voltage turn- on transient pattern is analyzed for the detection of IGBT hard switchi
Publikováno v:
The Journal of Supercritical Fluids. 183:105559
Autor:
Wai Tung Ng, Xinhong Cheng, Ru Qian, Dongliang Zhang, Ziyue Gu, Hongyue Zhu, Dengpeng Wu, Yuehui Yu, Qian Wang, Li Zheng, Lingyan Shen, Wen Zhou
Publikováno v:
IEEE Transactions on Electron Devices. 65:3379-3387
In order to analyze the influence of different substrates on the performance of metal–insulator–semiconductor AlGaN/GaN high-electron mobility transistors, devices on free-standing GaN (FS-GaN), silicon, and sapphire substrates with similar AlGaN
Autor:
Qian Wang, Dashen Shen, Lingyan Shen, Xinhong Cheng, Dongliang Zhang, Li Xinchang, Li Zheng, Hongyue Zhu, Yuehui Yu, Jingjie Li
Publikováno v:
Materials Science in Semiconductor Processing. 67:104-109
In this work, we performed an inductively coupled plasma (ICP) etching of SiC substrates using different masks including SiO2, Ni, Ni/SiO2 and Ni/Al2O3, and the properties of trenches were systemically analyzed. In comparison with other three masks,