Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Hongyi Dou"'
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 21, Pp n/a-n/a (2024)
Abstract Hybrid metamaterials (HMs) have attracted significant research interests owing to their unique optical properties and their ability to manipulate light‐matter interaction in a novel and controlled fashion beyond what any single material of
Externí odkaz:
https://doaj.org/article/e35f948b45ab4b759f61959da70c2816
Publikováno v:
Sensors, Vol 24, Iss 15, p 4863 (2024)
The integration of nanocomposite thin films with combined multifunctionalities on flexible substrates is desired for flexible device design and applications. For example, combined plasmonic and magnetic properties could lead to unique optical switcha
Externí odkaz:
https://doaj.org/article/2a6b40d41b934bd18badd60a25bf9565
Autor:
Bethany X. Rutherford, Di Zhang, Lizabeth Quigley, James P. Barnard, Bo Yang, Juanjuan Lu, Sundar Kunwar, Hongyi Dou, Jianan Shen, Aiping Chen, Haiyan Wang
Publikováno v:
Small Science, Vol 3, Iss 11, Pp n/a-n/a (2023)
Combinatorial growth is capable of creating a compositional gradient for thin film materials and thus has been adopted to explore composition variation mostly for metallic alloy thin films and some dopant concentrations for ceramic thin films. This s
Externí odkaz:
https://doaj.org/article/4d5b2d5bae8a464bb4ab3d128151798e
Autor:
Yizhi Zhang, Jiawei Song, Ping Lu, Julia Deitz, Di Zhang, Hongyi Dou, Jianan Shen, Zedong Hu, Xinghang Zhang, Haiyan Wang
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 21, Pp n/a-n/a (2023)
Abstract Metamaterials have gained great research interest in recent years owing to their potential for property tunability, multifunctionality, and property coupling. As a new group of self‐assembled thin films, vertically aligned nanocomposite (V
Externí odkaz:
https://doaj.org/article/cf2d4043b3204aa9bd06d670c69a7324
Autor:
Hongyi Dou, Markus Hellenbrand, Ming Xiao, Zedong Hu, Sundar Kunwar, Aiping Chen, Judith L. MacManus‐Driscoll, Quanxi Jia, Haiyan Wang
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 5, Pp n/a-n/a (2023)
Abstract Defect engineering in valence change memories aimed at tuning the concentration and transport of oxygen vacancies are studied extensively, however mostly focusing on contribution from individual extended defects such as single dislocations a
Externí odkaz:
https://doaj.org/article/0f26ccf0d459476ca3739553ed484bf7
Autor:
Bethany X. Rutherford, Hongyi Dou, Bruce Zhang, Zihao He, James P. Barnard, Robynne L. Paldi, Haiyan Wang
Publikováno v:
Nanomaterials, Vol 12, Iss 19, p 3460 (2022)
Nanocomposite thin film materials present great opportunities in coupling materials and functionalities in unique nanostructures including nanoparticles-in-matrix, vertically aligned nanocomposites (VANs), and nanolayers. Interestingly the nanocompos
Externí odkaz:
https://doaj.org/article/d4380d7e3102437a9e8df19d14065fe7
Autor:
James P. Barnard, Robynne L. Paldi, Matias Kalaswad, Zihao He, Hongyi Dou, Yizhi Zhang, Jianan Shen, Dongqi Zheng, Neil R. Dilley, Raktim Sarma, Aleem M. Siddiqui, Peide D. Ye, Haiyan Wang
Publikováno v:
Crystal Growth & Design. 23:2248-2256
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::383c4d78c45e2543e06c039e191e77bb
https://doi.org/10.1021/acs.cgd.2c01300
https://doi.org/10.1021/acs.cgd.2c01300
Autor:
Zhuocheng Zhang, Zehao Lin, Pai-Ying Liao, Vahid Askarpour, Hongyi Dou, Zhongxia Shang, Adam Charnas, Mengwei Si, Sami Alajlouni, Ali Shakouri, Haiyan Wang, Mark Lundstrom, Jesse Maassen, Peide D. Ye
Publikováno v:
IEEE Electron Device Letters. 43:1905-1908
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b35563c5c17760f0b8adf307fb5559d
https://doi.org/10.1109/led.2022.3210005
https://doi.org/10.1109/led.2022.3210005
Autor:
Hellenbrand, Markus, Bakhit, Babak, Hongyi, Dou, Xiao, Ming, Hill, Megan, Sun, Zhuotong, Mehonic, Adnan, Chen, Aiping, Jia, Quanxi, Wang, Haiyan, Driscoll, Judith
A design concept of phase-separated amorphous nanocomposite thin films is presented which realizes interfacial resistive switching (RS) in hafnium-oxide-based devices. The films are formed by incorporating an average of 7% Ba into hafnium oxide durin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______109::8de807692403451eb6a5612a61357a9a
https://www.repository.cam.ac.uk/handle/1810/352870
https://www.repository.cam.ac.uk/handle/1810/352870
Autor:
Di Zhang, Xingyao Gao, Juanjuan Lu, Ping Lu, Julia Deitz, Jianan Shen, Hongyi Dou, Zihao He, Zhongxia Shang, C. Austin Wade, Xinghang Zhang, Aiping Chen, Haiyan Wang
Publikováno v:
Nano Research. 16:1465-1472
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfa5ba623e83722f1e08b5ca35d9622a
https://doi.org/10.1007/s12274-022-4663-1
https://doi.org/10.1007/s12274-022-4663-1