Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Hongxiao Lin"'
Publikováno v:
Journal of Medical Case Reports, Vol 18, Iss 1, Pp 1-5 (2024)
Abstract Background Primary cutaneous mucinous carcinoma is a rare neoplasia of the sweat gland. The age-adjusted incidence was 0.024 tumors per 100,000 person-years. It is possible that the actual number of tumors may be slightly higher than previou
Externí odkaz:
https://doaj.org/article/89e5d946cf144ff887cb997b2aafd2aa
Autor:
Henry H. Radamson, Yuanhao Miao, Ziwei Zhou, Zhenhua Wu, Zhenzhen Kong, Jianfeng Gao, Hong Yang, Yuhui Ren, Yongkui Zhang, Jiangliu Shi, Jinjuan Xiang, Hushan Cui, Bin Lu, Junjie Li, Jinbiao Liu, Hongxiao Lin, Haoqing Xu, Mengfan Li, Jiaji Cao, Chuangqi He, Xiangyan Duan, Xuewei Zhao, Jiale Su, Yong Du, Jiahan Yu, Yuanyuan Wu, Miao Jiang, Di Liang, Ben Li, Yan Dong, Guilei Wang
Publikováno v:
Nanomaterials, Vol 14, Iss 10, p 837 (2024)
After more than five decades, Moore’s Law for transistors is approaching the end of the international technology roadmap of semiconductors (ITRS). The fate of complementary metal oxide semiconductor (CMOS) architecture has become increasingly unkno
Externí odkaz:
https://doaj.org/article/4ec18820053d48f8b361b57d88c68aa2
Autor:
Enxu Liu, Junjie Li, Na Zhou, Rui Chen, Hua Shao, Jianfeng Gao, Qingzhu Zhang, Zhenzhen Kong, Hongxiao Lin, Chenchen Zhang, Panpan Lai, Chaoran Yang, Yang Liu, Guilei Wang, Chao Zhao, Tao Yang, Huaxiang Yin, Junfeng Li, Jun Luo, Wenwu Wang
Publikováno v:
Nanomaterials, Vol 13, Iss 14, p 2127 (2023)
Gate-all-around (GAA) structures are important for future logic devices and 3D-DRAM. Inner-spacer cavity etching and channel release both require selective etching of Si0.7Ge0.3. Increasing the number of channel-stacking layers is an effective way to
Externí odkaz:
https://doaj.org/article/a6adc7eef2414d46886ded89e8221977
Autor:
Chen Li, Hongxiao Lin, Junjie Li, Xiaogen Yin, Yongkui Zhang, Zhenzhen Kong, Guilei Wang, Huilong Zhu, Henry H. Radamson
Publikováno v:
Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-12 (2020)
Abstract Vertical gate-all-around field-effect transistors (vGAAFETs) are considered as the potential candidates to replace FinFETs for advanced integrated circuit manufacturing technology at/beyond 3-nm technology node. A multilayer (ML) of Si/SiGe/
Externí odkaz:
https://doaj.org/article/8b11493489934fcb81ee73ac7e1d9d85
Autor:
Yuanhao Miao, Hongxiao Lin, Ben Li, Tianyu Dong, Chuangqi He, Junhao Du, Xuewei Zhao, Ziwei Zhou, Jiale Su, He Wang, Yan Dong, Bin Lu, Linpeng Dong, Henry H. Radamson
Publikováno v:
Nanomaterials, Vol 13, Iss 3, p 606 (2023)
Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising fo
Externí odkaz:
https://doaj.org/article/dd0e15541ba34154bf07e1ad6be6565f
Autor:
Yong Du, Wenqi Wei, Buqing Xu, Guilei Wang, Ben Li, Yuanhao Miao, Xuewei Zhao, Zhenzhen Kong, Hongxiao Lin, Jiahan Yu, Jiale Su, Yan Dong, Wenwu Wang, Tianchun Ye, Jianjun Zhang, Henry H. Radamson
Publikováno v:
Micromachines, Vol 13, Iss 10, p 1579 (2022)
The development of the low dislocation density of the Si-based GaAs buffer is considered the key technical route for realizing InAs/GaAs quantum dot lasers for photonic integrated circuits. To prepare the high-quality GaAs layer on the Si substrate,
Externí odkaz:
https://doaj.org/article/174102d112a741b28c7308bbd43ec1be
Autor:
Buqing Xu, Guilei Wang, Yong Du, Yuanhao Miao, Ben Li, Xuewei Zhao, Hongxiao Lin, Jiahan Yu, Jiale Su, Yan Dong, Tianchun Ye, Henry H. Radamson
Publikováno v:
Nanomaterials, Vol 12, Iss 15, p 2704 (2022)
The realization of high-performance Si-based III-V quantum-dot (QD) lasers has long attracted extensive interest in optoelectronic circuits. This manuscript presents InAs/GaAs QD lasers integrated on an advanced GaAs virtual substrate. The GaAs layer
Externí odkaz:
https://doaj.org/article/bff3db07284140e9b0b8ee73eea59212
Autor:
Zhenzhen Kong, Guilei Wang, Renrong Liang, Jiale Su, Meng Xun, Yuanhao Miao, Shihai Gu, Junjie Li, Kaihua Cao, Hongxiao Lin, Ben Li, Yuhui Ren, Junfeng Li, Jun Xu, Henry H. Radamson
Publikováno v:
Nanomaterials, Vol 12, Iss 6, p 981 (2022)
GeSn materials have attracted considerable attention for their tunable band structures and high carrier mobilities, which serve well for future photonic and electronic applications. This research presents a novel method to incorporate Sn content as h
Externí odkaz:
https://doaj.org/article/bc6197c8bb9d43888a8185e3df0b8f62
Autor:
Yuanhao Miao, Guilei Wang, Zhenzhen Kong, Buqing Xu, Xuewei Zhao, Xue Luo, Hongxiao Lin, Yan Dong, Bin Lu, Linpeng Dong, Jiuren Zhou, Jinbiao Liu, Henry H. Radamson
Publikováno v:
Nanomaterials, Vol 11, Iss 10, p 2556 (2021)
GeSn alloys have already attracted extensive attention due to their excellent properties and wide-ranging electronic and optoelectronic applications. Both theoretical and experimental results have shown that direct bandgap GeSn alloys are preferable
Externí odkaz:
https://doaj.org/article/65843389625b45b4b9ca41a671e9efe2
Autor:
Yangyang Li, Huilong Zhu, Zhenzhen Kong, Yongkui Zhang, Xuezheng Ai, Guilei Wang, Qi Wang, Ziyi Liu, Shunshun Lu, Lu Xie, Weixing Huang, Yongbo Liu, Chen Li, Junjie Li, Hongxiao Lin, Jiale Su, Chuanbin Zeng, Henry H. Radamson
Publikováno v:
Nanomaterials, Vol 11, Iss 5, p 1209 (2021)
Gate-all-around (GAA) field-effect transistors have been proposed as one of the most important developments for CMOS logic devices at the 3 nm technology node and beyond. Isotropic etching of silicon–germanium (SiGe) for the definition of nano-scal
Externí odkaz:
https://doaj.org/article/4dcf8caf58a342eda355502ff25c8f9e