Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Hongxiang Mo"'
Publikováno v:
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..
Leading edge technologies are essential lo the foundry success in mainland China. In this paper, 90 nm and beyond technology with 1.2 nm physical gate oxide, strained silicon, NiSi and low-k Cu interconnection for high performance logic is presented.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2df30cd6a9185d6aa4bd34516b6bd44d
https://doi.org/10.1109/icsict.2004.1435103
https://doi.org/10.1109/icsict.2004.1435103
Autor:
Fei Chen, John Chen, Bei Zhu, Guo-Ping Ru, Hongxiang Mo, Paolo Bonfanti, Hui-Zhen Wu, Dawei Gao, Hanming Wu, Yu-Long Jiang
Publikováno v:
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..
Ni silicide and germanosilicide formation with one-step and two-step rapid thermal annealing are compared in this study. The 1st annealing temperature for NiSi and Ni(Si/sub 1-x/Ge/sub x/) in two-step annealing process are investigated with sheet res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59ff504a994b20e13ef07c284f6051c7
https://doi.org/10.1109/icsict.2004.1435048
https://doi.org/10.1109/icsict.2004.1435048
Autor:
John Chen, Bei Zhu, Hui-Zhen Wu, Paolo Bonfanti, Hongxiang Mo, Dawei Gao, Yu-Long Jiang, Guo-Ping Ru, Hanming Wu
Publikováno v:
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..
As the critical dimension goes down to sub micron range, salicide (self-aligned-silicide) technology has become a crucial step in the fabrication process of ultra-high-speed CMOS devices. Among salicides processes, nickel salicide is recently becomin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c9fcc87aa4ec2e8c0d390cfae0d72b0
https://doi.org/10.1109/icsict.2004.1435049
https://doi.org/10.1109/icsict.2004.1435049
Publikováno v:
IEEE International Electron Devices Meeting 2003.
Selective Si/sub 1-x/Ge/sub x/ source/drain technology was previously proposed to address the parasitic series resistance requirements of future CMOS IC generations. The technology provides abrupt lateral doping profiles and high dopant activation to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1853e210e756eacedb9048791fe159f
https://doi.org/10.1109/iedm.2003.1269330
https://doi.org/10.1109/iedm.2003.1269330
Publikováno v:
Digest. International Electron Devices Meeting.
Future CMOS technology nodes require super-abrupt source/drain junctions with very low contact resistivities. In this paper, we examine properties of ultra-shallow junctions formed by selective deposition of in-situ doped Si/sub 1-x/Ge/sub x/ alloys.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3764149009cde31d7fce203e9913a68
https://doi.org/10.1109/iedm.2002.1175856
https://doi.org/10.1109/iedm.2002.1175856
Publikováno v:
MRS Proceedings. 765
In this paper, we present our recent results on nickel germanosilicide contacts formed on p+-n and n+-p junctions formed by selective deposition of in-situ doped Si1-xGexalloys. Our results show that ultra-thin, low resistivity NiSi1-xGexcontacts can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::342b5a6f9fd0c20587ec7c0c9ac28d7f
https://doi.org/10.1557/proc-765-d7.7
https://doi.org/10.1557/proc-765-d7.7
Ultra-shallow source/drain junctions for nanoscale CMOS using selective silicon-germanium technology
Publikováno v:
Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C).
Future CMOS technology nodes bring new challenges to formation of source/drain junctions and their contacts to limit their series resistance contribution to ten percent of the device channel resistance. This requires not only extremely low junction s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e4bd190eafb39ecf0f288225454c23c
https://doi.org/10.1109/iwjt.2001.993832
https://doi.org/10.1109/iwjt.2001.993832
Publikováno v:
MRS Proceedings. 745
As the MOSFET dimensions continue to shrink, source/drain contact resistance is emerging as the dominant component of the MOSFET parasitic series resistance. To meet the series resistance requirements of future MOSFETs, contact resistivity values nea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be79ad57d711e1addc4da6e02b0f93e4
https://doi.org/10.1557/proc-745-n4.11
https://doi.org/10.1557/proc-745-n4.11
Publikováno v:
MRS Proceedings. 717
Future CMOS technology nodes bring new challenges to formation of source/drain junctions and their contacts. To avoid MOSFET performance degradation with scaling, series resistance contribution of each junction must be limited to five percent of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c85b5a519bd6ee66ca054409588696d
https://doi.org/10.1557/proc-717-c4.1
https://doi.org/10.1557/proc-717-c4.1
Publikováno v:
MRS Proceedings. 716
Selective SiGe source/drain technology based on selective deposition of in-situ doped SiGe alloys in recessed source/drain regions can provide junctions with low sheet and contact resistance as well as abrupt doping profiles. This paper examines prop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13d38683a220d3c39c09e38af6ea6cda
https://doi.org/10.1557/proc-716-b10.7
https://doi.org/10.1557/proc-716-b10.7