Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Hongxi Lu"'
Publikováno v:
AIP Advances, Vol 4, Iss 2, Pp 027123-027123-6 (2014)
Self-assembly SiO2 nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality becaus
Externí odkaz:
https://doaj.org/article/a26668bac53c4ad4bdd4af456ca584e1
Autor:
Kui Wu, Yiyun Zhang, Tongbo Wei, Ding Lan, Bo Sun, Haiyang Zheng, Hongxi Lu, Yu Chen, Junxi Wang, Yi Luo, Jinmin Li
Publikováno v:
AIP Advances, Vol 3, Iss 9, Pp 092124-092124-7 (2013)
The InGaN multiple quantum well light-emitting diodes (LEDs) with different sizes of indium-tin-oxide (ITO) nanobowl photonic crystal (PhC) structure has been fabricated using self-assembled monolayer nanosphere lithography. The light output power (L
Externí odkaz:
https://doaj.org/article/4748b7e873c34b52a7453d9dd9985dfc
Publikováno v:
Optical Materials. 94:237-240
Light-emission contributed from discrete energy levels of self-assembly InGaN quantum dots is explored to fabricate broadband light-emitting diodes (LEDs). A series of InGaN quantum dots samples are self-assembly grown on sapphire substrate by metal-
Publikováno v:
IEEE Transactions on Electron Devices. 66:1197-1201
We report AlGaN/GaN n-p-n heterojunction bipolar transistors (HBTs) on sapphire substrates with selective-area grown AlGaN emitters by metal–organic chemical vapor deposition. Metal–semiconductor contact on the external p-GaN base layer shows ohm
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811579448
This paper focus on studying how the instant centre impacts loads transfer in double wishbone suspension model when vehicle moving straight (brakes or accelerates), instant center could further affects loads transfer by affecting inverse geometry val
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2877b116c98c25000375a2ffa604b9f5
https://doi.org/10.1007/978-981-15-7945-5_21
https://doi.org/10.1007/978-981-15-7945-5_21
Autor:
Lei Liu, Kaiyou Wang, Faguang Yan, Hongxi Lu, Amalia Patanè, Chao Yang, Zhiguo Yu, Jinmin Li, Lixia Zhao
Publikováno v:
Nanoscale. 9:8142-8148
Photodetectors for the ultraviolet (UV) range of the electromagnetic spectrum are in great demand for several technologies, but require the development of novel device structures and materials. Here we report on the high detectivity of UV photodetect
Publikováno v:
physica status solidi c. 13:307-310
A high-resistance buffer layer is critical for GaN-based high electron mobility transistors (HEMTs) to suppress the drain leakage current and pre-mature device breakdown. A typical method to obtain the HR buffer layers is the acceptor impurity doping
Autor:
An Pingbo, Junxi Wang, Ruifei Duan, Shuo Zhang, Lixia Zhao, Hongxi Lu, Lei Liu, Xuecheng Wei, Jinmin Li
Publikováno v:
physica status solidi c. 13:200-204
In this study, gallium nitride (GaN) films were grown on the quartz glass substrates using metal organic chemical vapor deposition with AlN buffer layer. The AlN layer was deposited using rf-magnetron sputtering. Although the direct nucleation of GaN
Autor:
Yi Luo, Lai Wang, Changzheng Sun, Wanyong Li, Jian Wang, Hongxi Lu, Yanjun Han, Jianchang Yan, Tongbo Wei, Bing Xiong
Publikováno v:
physica status solidi (a). 212:2341-2344
GaN-based ridge waveguides with very smooth and vertical sidewalls are fabricated by combined inductively coupled plasma (ICP) etching and wet chemical etching. The height of GaN waveguide is precisely controlled by ICP dry etching, while smooth and
Autor:
Xiaoyan Yi, Hongxi Lu, Zhao Si, Binglei Fu, Zhiqiang Liu, Yan Cheng, Junxi Wang, Tongbo Wei, Guodong Yuan, Jinmin Li, Xionghui Zeng
Publikováno v:
RSC Advances. 5:100646-100650
We reported the combination of micro-pyramid active layers and graphene electrode to realize the phosphor-free InGaN based white light emitting diodes (LEDs). SEM and TEM measurements were used to characterize the structural qualities of the micro py