Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Hongwoo, Baek"'
Autor:
Takashi Taniguchi, Kenji Watanabe, Ruoyu Chen, Petr Stepanov, Chun Ning Lau, Jiawei Yang, Dmitry Smirnov, Shi Che, Hongwoo Baek, Jason Wu, Son Tran
Publikováno v:
Nano Letters. 18:229-234
As a high mobility two-dimensional semiconductor with strong structural and electronic anisotropy, atomically thin black phosphorus (BP) provides a new playground for investigating the quantum Hall (QH) effect, including outstanding questions such as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e326dbeeb7fa3836086316c7809f350
https://doi.org/10.1021/acs.nanolett.7b03954
https://doi.org/10.1021/acs.nanolett.7b03954
Autor:
Duming, Zhang, Jeonghoon, Ha, Hongwoo, Baek, Yang-Hao, Chan, Fabian D, Natterer, Alline F, Myers, Joshua D, Schumacher, William G, Cullen, Albert V, Davydov, Young, Kuk, M Y, Chou, Nikolai B, Zhitenev, Joseph A, Stroscio
Publikováno v:
Physical review materials. 1(2)
We report a rectangular charge density wave (CDW) phase in strained 1T-VSe2 thin films synthesized by molecular beam epitaxy on c-sapphire substrates. The observed CDW structure exhibits an unconventional rectangular 4a×√3a periodicity, as opposed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::6ee76665b889f174cc5db50bae19e99f
https://pubmed.ncbi.nlm.nih.gov/28890947
https://pubmed.ncbi.nlm.nih.gov/28890947
Autor:
William G. Cullen, Jeonghoon Ha, Young Kuk, Hongwoo Baek, Duming Zhang, Fabian D. Natterer, Yang-Hao Chan, Mei-Yin Chou, Alline F. Myers, Joseph A. Stroscio, Nikolai B. Zhitenev, Albert V. Davydov, Joshua Schumacher
Publikováno v:
Physical Review Materials. 1
We report a rectangular charge density wave (CDW) phase in strained 1T-VSe2 thin films synthesized by molecular beam epitaxy on c-sapphire substrates. The observed CDW structure exhibits an unconventional rectangular 4a×√3a periodicity, as opposed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::281e571fcaf198ebc7e2d4eb4f312ba5
https://doi.org/10.1103/physrevmaterials.1.024005
https://doi.org/10.1103/physrevmaterials.1.024005
Autor:
Ruoyu Chen, Dmitry Smirnov, Chun Ning Lau, Jiawei Yang, Yanmeng Shi, Marc Bockrath, Takashi Taniguchi, Timothy Espiritu, Son Tran, Nathaniel Gillgren, Seongphill Moon, Kenji Watanabe, Hongwoo Baek
Publikováno v:
Science Advances
Few-layer black phosphorus acts as tunable ambipolar wide quantum wells.
Quantum wells (QWs) constitute one of the most important classes of devices in the study of two-dimensional (2D) systems. In a double-layer QW, the additional “which-laye
Quantum wells (QWs) constitute one of the most important classes of devices in the study of two-dimensional (2D) systems. In a double-layer QW, the additional “which-laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f13ef96b1042a62375a6693b0775af2f
http://arxiv.org/abs/1703.04911
http://arxiv.org/abs/1703.04911
Autor:
Hongwoo Baek, Young Kuk, Sungjun Lim, Gunn Kim, Joseph A. Stroscio, Sungmin Kim, Jisoon Ihm, Suklyun Hong, Jeong Hoon Kwon, Beomyong Hwang, Jong Keon Yoon, Dongchul Sung, Jeongwoon Hwang, Minjun Lee
Publikováno v:
Scientific Reports
SCIENTIFIC REPORTS(6)
SCIENTIFIC REPORTS(6)
Securing a semiconducting bandgap is essential for applying graphene layers in switching devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by introducing an asymmetry between the A and B sub-lattice sites. A recen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::78498c31677c0e650a64226e411e4566
Autor:
Fabian D. Natterer, Joseph A. Stroscio, Young Kuk, Nikolai B. Zhitenev, Duming Zhang, Hongwoo Baek, William G. Cullen, Jeonghoon Ha
Publikováno v:
Physical Review B
We report on spatial measurements of the superconducting proximity effect in epitaxial graphene induced by a graphene-superconductor interface. Superconducting aluminum films were grown on epitaxial multilayer graphene on SiC. The aluminum films were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb025834c0775a4bda9a3060edb9ce03
Autor:
Young Jae Song, Young-Woo Son, S. Y. Jung, Sungjong Woo, Jungseok Chae, Jeonghoon Ha, Hongwoo Baek, Nikolai B. Zhitenev, Young Kuk, Joseph A. Stroscio, H. J. Yang
Publikováno v:
International Journal of High Speed Electronics and Systems. 20:205-216
Despite the recent progress in understanding the geometric structures of defects and edges in a graphene device (GD), how such defects and edges affect the transport properties of the device have not been clearly defined. In this study, the surface g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4fd156b234e78db214a57fb796a10910
https://doi.org/10.1142/s0129156411006532
https://doi.org/10.1142/s0129156411006532
Publikováno v:
Journal of the Korean Physical Society. 56:620-624
An insulating CuN monolayer was grown on a Cu(111) surface; subsequently, the dynamic growth process, the reconstructed geometric structure and the electronic structure were studied using scanning tunneling microscopy. Confirmation of the atomic mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07aeeeb1a8d43a603dbb8c7bf9ee005a
https://doi.org/10.3938/jkps.56.620
https://doi.org/10.3938/jkps.56.620
Autor:
Joseph A. Stroscio, Rongwei Hu, Jonathan P. Winterstein, Duming Zhang, Bharath Natarajan, Steven Ziemak, Young Kuk, Kefeng Wang, Renu Sharma, Nikolai B. Zhitenev, Johnpierre Paglione, Hongwoo Baek, Jeonghoon Ha
Superconductivity results from a Bose condensate of Cooper-paired electrons with a macroscopic quantum wavefunction. Dramatic effects can occur when the region of the condensate is shaped and confined to the nanometer scale. Recent progress in nanost
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4b3b48c79d2fba6cda48895d60ef152
http://arxiv.org/abs/1510.00362
http://arxiv.org/abs/1510.00362
Autor:
Hongwoo Baek, S. Y. Jung, Young-Woo Son, Young Jae Song, Joseph A. Stroscio, Nikolai B. Zhitenev, Jungseok Chae, J. Ha, Sungjong Woo, Yong In Kuk
Publikováno v:
Microelectronic Engineering. 88:1211-1213
Despite recent progress in understanding geometric structure, electronic structure, and transport properties in a graphene device (GD), role of point defects, edges, traps in a GD or a gate insulator has been poorly defined. We have studied electroni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e7d32a0b3784c0869c78b531d3e3e97
https://doi.org/10.1016/j.mee.2011.03.159
https://doi.org/10.1016/j.mee.2011.03.159