Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Hongsun Hwang"'
Publikováno v:
Catalysis Today. 359:28-34
Palladium (Pd) on carbon support, electron-enriched by hydrogen incorporation (Pd-H/C), is synthesized via dimethylamine borane complex at multiple temperatures and used for the oxidation of formate (HCOO−). The electronic effect of H is confirmed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ac288119ebcc680850a3cdaebb8eeaa
https://doi.org/10.1016/j.cattod.2019.06.042
https://doi.org/10.1016/j.cattod.2019.06.042
Autor:
Moon-Sung Kang, Jaeyoung Lee, Sunghyun Uhm, Sujik Hong, Jin-Soo Park, Do-Hyeong Kim, Hongsun Hwang
Publikováno v:
Journal of Energy Chemistry. 51:175-181
In this study, we first attempted to discover the optimal configuration of membrane-electrode assemblies (MEAs) used to achieve a high performance of direct hydrazine fuel cells (DHFCs). We have investigated the effect of water management and the ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42bba36a7ce60cfcb7820b29f9d645f0
https://doi.org/10.1016/j.jechem.2020.03.081
https://doi.org/10.1016/j.jechem.2020.03.081
Publikováno v:
Sustainable Energy & Fuels. 4:1899-1907
Direct formate fuel cells (DFFCs) are a promising clean energy conversion system in operating portable devices. However, their practicability is currently challenging due to the absence of superior anion ionomers. In this respect, the anion ionomer-f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::189f821031b1782fe87a7c93d7d2ebcc
https://doi.org/10.1039/c9se01044k
https://doi.org/10.1039/c9se01044k
Publikováno v:
ECS Transactions. 85:149-158
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::991f65e9178de072469e7150220eb9a9
https://doi.org/10.1149/08512.0149ecst
https://doi.org/10.1149/08512.0149ecst
Autor:
Jungwon Bae, Jonghoon Kim, Jongbum Lee, Myunghoon Oak, Minju-Shin Minju-Shin, Jung-Bae Lee, Kyungrak-Cho Kyungrak-Cho, Tae-Young Oh, Hongsun Hwang, Sung-Hoon Park, Choongsun Park
Publikováno v:
International Symposium for Testing and Failure Analysis.
Rapid and accurate root cause analysis of the defect contributes to improvement in yield and quality in semiconductor manufacturing system. In particular, imperfection of final test can cause major problems for customers, so analysis on root cause of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3367fb1a23782adee7b0dc8cc3a7a950
https://doi.org/10.31399/asm.cp.istfa2019p0430
https://doi.org/10.31399/asm.cp.istfa2019p0430
Autor:
Tae-Young Oh, Hoon-Chang Yang, Seong-Jin Jang, Hongsun Hwang, Changyu Park, Jonghoon Kim, Gyuyoung Nam, Hyungchae Jeon, Youngseok Ryu, Jungsuk Ko
Publikováno v:
International Symposium for Testing and Failure Analysis.
The necessity of hot temperature stress is widely recognized as the initial stress methodology to maintain the stability of products from infant defects in device [1, 2]. However, hot temperature stress has a disadvantage in terms of stress uniformit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cffd25ae671b3c1242dd1625f3f76ccf
https://doi.org/10.31399/asm.cp.istfa2018p0477
https://doi.org/10.31399/asm.cp.istfa2018p0477
Autor:
Incheol Nam, Hongsun Hwang, Minju Shin, Min-Soo Kim, Seong-Jin Jang, Kangyong Cho, Sangjae Rhee, Daesun Kim, Jinseon Kim
Publikováno v:
International Symposium for Testing and Failure Analysis.
For fault management, various types of error-correcting codes (ECC) have been widely used for most computers and memory. From a memory perspective, the ECC technique is generally adopted for DRAM modules to correct data corruption among multiple chip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bcac16f9b70fb9aba0a9e79f4117b79
https://doi.org/10.31399/asm.cp.istfa2017p0424
https://doi.org/10.31399/asm.cp.istfa2017p0424
Autor:
Seong-Jin Jang, Seon-Mi Kim, Donggyun Yoo, Jaeguen Chung, Kangyong Cho, Sangjae Rhee, Young-Il Kim, Incheol Nam, Hyungchae Jeon, Chijong Baek, Hongsun Hwang, Jahyun Koo
Publikováno v:
International Symposium for Testing and Failure Analysis.
As various types of DRAM package have been developed, new defects in interconnection in chip have been discovered after assembly process such as flip chip bump mount or wire bonding. There are lots of regular inspections in manufacturing process to d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c95ed2653343b13d99311cb6b2ae53a8
https://doi.org/10.31399/asm.cp.istfa2017p0508
https://doi.org/10.31399/asm.cp.istfa2017p0508
Publikováno v:
Sustainable Energy & Fuels; Apr2020, Vol. 4 Issue 4, p1899-1907, 9p
Autor:
C. K. Han, S. J. Rhee, G. Y. Jin, J. W. Ru, Keun-Yeong Cho, S. M. Kang, J. J. Kim, I. K. Yoon, Hongsun Hwang, H. S. Lim
Publikováno v:
2016 IEEE International Conference on Industrial Engineering and Engineering Management (IEEM).
During burn-in of DRAM (Dynamic Random Access Memory), power consumption has become a significant consideration on the capabilities of test environment with the growing quantity. Under burn-in test condition, each electrical current is categorized as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f2823240e79fa30006fe2d80f00b741
https://doi.org/10.1109/ieem.2016.7798162
https://doi.org/10.1109/ieem.2016.7798162