Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Hongshuo Zou"'
Autor:
Shengran Cai, Wei Li, Hongshuo Zou, Haifei Bao, Kun Zhang, Jiachou Wang, Zhaohui Song, Xinxin Li
Publikováno v:
Micromachines, Vol 10, Iss 4, p 227 (2019)
In this paper, a monolithic tri-axis piezoresistive high-shock accelerometer has been proposed that has been single-sided fabricated in a single (111)-silicon wafer. A single-cantilever structure and two dual-cantilever structures are designed and mi
Externí odkaz:
https://doaj.org/article/f481b68089554339943a59930c15d8c6
This paper presents the design and experimental evaluation of a micromachined Lorentz force magnetometer with a dual-resonator structure, interfaced with an electromechanical sigma-delta modulation (EM- $\Sigma \Delta {\text {M}}$ ) force rebalancing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ebb9ada36d3696b5112460189003cca0
https://lirias.kuleuven.be/handle/123456789/654881
https://lirias.kuleuven.be/handle/123456789/654881
Publikováno v:
Journal of Microelectromechanical Systems. 26:879-885
In the microelectromechanical systems (MEMS) field, low-range (e.g., kPa or sub-kPa) differential pressure sensors have remained difficult for decades. Generally, there are two unsolved problems that hinder volume production and wide applications in
Publikováno v:
2018 IEEE Micro Electro Mechanical Systems (MEMS).
This paper presents a new self-clocked dual-resonator Lorentz force magnetometer, based on dual quantization electromechanical sigma-delta modulation (EM-ΣΔM) closed-loop operation. The magnetometer comprises a matched pair of resonators on the sam
This paper presents a novel single-side (111)-silicon (non-SOI) fabricated triaxis capacitive microaccelerometer with a dual quantization electromechanical sigma–delta modulator (EM- $\Sigma \Delta {\mathrm{ M}}$ ) interface circuit. The fully CMOS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23aaca75be0ef654afa1efaa3f243271
https://lirias.kuleuven.be/handle/123456789/622716
https://lirias.kuleuven.be/handle/123456789/622716
Publikováno v:
2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS).
The paper reports an as tiny as 0.4mm×0.4mm piezoresistive absolute pressure sensor (barometer) for as low-cost as 0.01US$ product, which is widely demanded in smart-phone, drone and consumer-electronic market. The sensor is designed (3D scheme in F
Publikováno v:
2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS).
Single-sided fabricated monolithic tri-axis piezoresistive high-shock accelerometers are reported in this paper. A single-cantilever structure and two dual-cantilever structures are designed and employed to detect the Z-axis and X-/Y-axis high-shock
Publikováno v:
2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS).
This paper presents a novel front-side non-SOI fabricated tri-axis capacitive accelerometer with a dual quantization electromechanical sigma-delta modulator (EM-ΣΔΜ) interface. It can be used for realizing monolithic inertial microsystem units. Th
Publikováno v:
2017 IEEE 30th International Conference on Micro Electro Mechanical Systems (MEMS).
This paper reports a novel structure for monolithically integrated tri-axis high-shock accelerometer. All the tri-axial sensors feature ultra-high resonant frequencies, in which the Z-axis accelerometer is no longer a shorter board in design compared
Autor:
Xinxin Li, Jiachou Wang, Zhaohui Song, Haifei Bao, Shengran Cai, Wei Li, Kun Zhang, Hongshuo Zou
Publikováno v:
Micromachines
Volume 10
Issue 4
Micromachines, Vol 10, Iss 4, p 227 (2019)
Volume 10
Issue 4
Micromachines, Vol 10, Iss 4, p 227 (2019)
In this paper, a monolithic tri-axis piezoresistive high-shock accelerometer has been proposed that has been single-sided fabricated in a single (111)-silicon wafer. A single-cantilever structure and two dual-cantilever structures are designed and mi