Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Hongmiao Gao"'
Autor:
Hongmiao Gao, Hong Wang, Meng Zhang, Xiaofeng Shan, Aidong Qian, Lei Zhang, Dongxing Zhang, Wuwen Sun
Publikováno v:
Microbial pathogenesis. 174
Aeromonas veronii is a widespread pathogenic microorganism that can infect humans, animals, and a variety of aquatilia, at the same time, can cause diseases, mainly sepsis and ulcer syndrome. In this research, we first deleted the gene of lsrB's nucl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::680994cd035609643a510e6a7171b35c
https://pubmed.ncbi.nlm.nih.gov/36526036
https://pubmed.ncbi.nlm.nih.gov/36526036
Autor:
Hongmiao Gao, Chunyu Hu
Publikováno v:
Language, Context and Text. 1:288-312
Grammatical metaphors are indispensable resources that scientists employ to create scientific worlds. Nominalization, as a powerful tool of grammatical metaphor, can shed new light on the nature of economics through reconstruing human experiences in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3aada31212630bc7ecf09b902aabfb0a
https://doi.org/10.1075/langct.00012.hu
https://doi.org/10.1075/langct.00012.hu
Autor:
Taizoh Sadoh, Hongmiao Gao
Publikováno v:
Applied Physics Letters. 117:172102
Layer-exchange crystallization of Ge using a group-V element has been investigated to develop a low-temperature (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68f16559106eeb1ad6599a49faaeae77
https://doi.org/10.1063/5.0020489
https://doi.org/10.1063/5.0020489
Publikováno v:
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::249c6c2d51b6e2e2fcf009730c575962
https://doi.org/10.7567/ssdm.2017.ps-8-03
https://doi.org/10.7567/ssdm.2017.ps-8-03
Publikováno v:
2017 17th International Workshop on Junction Technology (IWJT).
Low temperature (≤500°C) formation of n-type crystalline Ge films on insulator is required to achieve the next-generation large-scale integrated circuits (LSI), where optical functions are merged. This is because n-type Ge shows high-efficiency op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::235ab2ae9bac661a8bf9b20c7dfdfb5b
https://doi.org/10.23919/iwjt.2017.7966503
https://doi.org/10.23919/iwjt.2017.7966503
Publikováno v:
Applied Physics Letters. 113:029901
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::444946be9fe648a61250454c29504bb8
https://doi.org/10.1063/1.5046407
https://doi.org/10.1063/1.5046407
Publikováno v:
Applied Physics Letters. 112:242103
High-speed thin-film transistors (TFTs) are required to develop the next generation of electronics, such as three-dimensional large-scale integrated circuits and advanced system-in-displays. For this purpose, high-carrier-mobility semiconductor films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efc89b15ffa26a46c110cc23a504313f
https://doi.org/10.1063/1.5024307
https://doi.org/10.1063/1.5024307
Autor:
Chunyu Hu, Hongmiao Gao
Publikováno v:
Language, Context & Text; 2019, Vol. 1 Issue 2, p288-312, 25p
Autor:
Hongmiao Gao
Publikováno v:
Hongmiao Gao
Compared with analysing the meaning of discourse from the perspective of language only, multimodal discourse analysis embarking on modes like images, words, colour, sound and other elements can help understand the underlying meaning expressed more th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::186d903c613366a22ca36934366cb2b6
https://doi.org/10.5539/ijel.v7n5p74
https://doi.org/10.5539/ijel.v7n5p74
Autor:
Haigui Yang, Dong Wang, Hiroshi Nakashima, Satoshi Hata, Hongmiao Gao, Ken Ichi Ikeda, Kana Hirayama
Publikováno v:
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac89d2ec3b1cf48ea2a68035fa6e3f84
https://doi.org/10.7567/ssdm.2008.p-3-18
https://doi.org/10.7567/ssdm.2008.p-3-18