Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Honglin Meng"'
Publikováno v:
CMES-Computer Modeling in Engineering & Sciences; 2024, Vol. 138 Issue 2, p1207-1236, 30p
Publikováno v:
Acta Psychologica Sinica. 53:1146-1160
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fda22d181549fad3ad5f94bd7a97ec20
https://doi.org/10.3724/sp.j.1041.2021.01146
https://doi.org/10.3724/sp.j.1041.2021.01146
Autor:
Fang Wei, Chenming Zhang, Honglin Meng, Zhihao Chu, Chao Huang, Lin Wu, Han Chen, Daquan He, Lulu Chen, Donghan Jin, Elly Shi, Robbin Zhu, Shane Su, Pei Wang, Hong Wei Zhang, Kai Yuan Chi, Xuechen Zhu, Kolos Lin, Peja Lee, Selena Chen, Abdalmohsen Elmalk, Andy Zhang, Leon Liang
Publikováno v:
2021 International Workshop on Advanced Patterning Solutions (IWAPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f4b96459e2a740a968a409a186b7216
https://doi.org/10.1109/iwaps54037.2021.9671249
https://doi.org/10.1109/iwaps54037.2021.9671249
Autor:
Sheng'An Xiao, Lei Wang, Honglin Meng, Bo Su, Xiaobo Guo, Yufeng Tong, Li Weifeng, Chen Fucheng
Publikováno v:
ECS Transactions. 44:187-196
For low k1 lithography process, some minor facotrs' impacts are strongly enhanced such as MEEF, lens distortion, wafer topography, pattern density and so on. How to minimize those impacts becomes more and more important. Unfortunately those impacts a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34b9a6a0dd24e0a6348eb85cd156807d
https://doi.org/10.1149/1.3694315
https://doi.org/10.1149/1.3694315
Autor:
Sheng'An Xiao, Dunran Li, Lei Wang, Liu Donghua, Qian Zhigang, Xiaobo Guo, Bo Su, Ji Wei, Honglin Meng, Chen Fucheng
Publikováno v:
ECS Transactions. 44:275-282
Advanced vertical NPN SiGe HBT device integrated in a CMOS technology are widly used in RF application such as LNA, PA, Mixer circuit. It can be fabricated by different architectures. HHNEC novel SiGe HBT device with non-EPI collector, borderless emi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4ad98d3158a0c3ca1e7b56e89147241
https://doi.org/10.1149/1.3694327
https://doi.org/10.1149/1.3694327
Publikováno v:
ECS Transactions. 34:277-284
While the mainstream wafer production is at 0.065 and 0.045 um with 300 mm diameter wafers with ArF exposure tools systems, an idea to explore production feasibility under groundrules smaller than 0.09 um while maintain the cost advantages in KrF exp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e609997bfa427651afa14871481152b
https://doi.org/10.1149/1.3567593
https://doi.org/10.1149/1.3567593