Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Hongjong Park"'
Publikováno v:
IEEE Solid-State Circuits Letters. 6:1-4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8303b68fc811fa9a74fb83fa35d2954c
https://doi.org/10.1109/lssc.2022.3233907
https://doi.org/10.1109/lssc.2022.3233907
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3325ad473b84c7769ec84cfb09088276
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830256
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830256
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 66:5685-5695
In this paper, a switchless dual-band, dual-mode power amplifier (PA) has been developed for multioctave operation. For the switchless dual-band operation, we proposed a new coupled-line-based diplexer structure. The proposed diplexer operates as a b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6de16997a3181074a19e612e5063af1
https://doi.org/10.1109/tmtt.2018.2879356
https://doi.org/10.1109/tmtt.2018.2879356
Publikováno v:
IEEE Electron Device Letters. 39:995-998
This letter reports the excellent radio frequency output characteristics of AlGaN/GaN-on-Si power amplifier (PA) monolithic microwave integrated circuits (MMICs) operating at the Ka-band, employing a recessed metal–insulator–semiconductor (MIS) s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24f6de9e374135235bf6f2b7e3a4ba44
https://doi.org/10.1109/led.2018.2834223
https://doi.org/10.1109/led.2018.2834223
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 66:2638-2648
Two-stage reactively matched gain cells are proposed to implement a high-gain multioctave distributed power amplifier (DPA). The proposed reactively matched distributed amplifier (RMDA) structure shows high gain and power in a small die size. Detaile
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f5b5d6ed4e3e8d7ccdda767345dc472
https://doi.org/10.1109/tmtt.2018.2817521
https://doi.org/10.1109/tmtt.2018.2817521
Publikováno v:
Journal of electromagnetic engineering and science. 16:44-51
A commercial 0.25 μm GaN process is used to implement 6–18 GHz wideband power amplifier (PA) monolithic microwave integrated circuits (MMICs). GaN HEMTs are advantageous for enhancing RF power due to high breakdown voltages. However, the large-sig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb6248509da659dab03cc5a9a64993f4
https://doi.org/10.5515/jkiees.2016.16.1.44
https://doi.org/10.5515/jkiees.2016.16.1.44
Publikováno v:
Electronics Letters. 53:916-918
A reliable numerical modelling for shielding evaluation of on-package conformal shields based on the integrated circuit (IC)-stripline method is presented. As a pilot test, the effects of the number of grounding pads and the thickness of a conformal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bceb7bf9bf4451f145e9b3376fd68fb5
https://doi.org/10.1049/el.2017.0524
https://doi.org/10.1049/el.2017.0524
Autor:
Chang-Hoon Lee, Youngwoo Kwon, Joonho Jung, Hongjong Park, Kwangseok Choi, Jaeduk Kim, Wangyong Lee, Wonho Lee
Publikováno v:
Journal of electromagnetic engineering and science. 17:105-107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bab3104e7d0752e349f29d48d7b70406
https://doi.org/10.5515/jkiees.2017.17.2.105
https://doi.org/10.5515/jkiees.2017.17.2.105
Publikováno v:
2018 IEEE/MTT-S International Microwave Symposium - IMS.
In this work, a watt-level switchless dual-band power amplifier (PA) has been developed for multi-octave operation. To switchless dual-band operation, we proposed a new coupled-line based diplexer structure at the inter-stage and output-stage of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46184d8a02f1cd1a5f27de4fd0cf72f9
https://doi.org/10.1109/mwsym.2018.8439169
https://doi.org/10.1109/mwsym.2018.8439169
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 63:4406-4414
Non-Foster matching is applied to design a multi- octave broadband GaN power amplifier (PA) in this paper. The bandwidth limitation from high-Q interstage matching is overcome through the use of negative capacitor, which is realized with a negative i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::330f84b7774ba590ba2eedea4093aad2
https://doi.org/10.1109/tmtt.2015.2495106
https://doi.org/10.1109/tmtt.2015.2495106