Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Honghyuk, Kim"'
Publikováno v:
IEEE Journal of Quantum Electronics. 58:1-7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89ff9e81840a8465aeb2ee47ab8ab09d
https://doi.org/10.1109/jqe.2022.3145838
https://doi.org/10.1109/jqe.2022.3145838
Publikováno v:
Crystals, Vol 11, Iss 4, p 446 (2021)
We report a high thermal stability of kappa gallium oxide grown on c-plane sapphire substrate by metal organic chemical vapor deposition. Kappa gallium oxide is widely known as a metastable polymorph transitioning its phase when subjected to a high t
Externí odkaz:
https://doaj.org/article/b6645f18294d472794e60a357bdc56e5
Autor:
Junhee Lee, Honghyuk Kim, Lakshay Gautam, Kun He, Xiaobing Hu, Vinayak P. Dravid, Manijeh Razeghi
Publikováno v:
Photonics, Vol 8, Iss 1, p 17 (2021)
We report the post-growth thermal annealing and the subsequent phase transition of Ga2O3 grown on c-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). We demonstrated the post-growth thermal annealing at temperatures higher
Externí odkaz:
https://doaj.org/article/e7cc6edf441d4b45ac4025523498231e
Autor:
Shining Xu, Shuqi Zhang, Jeremy Kirch, Suraj Suri, Nikhil Pokharel, Honghyuk Kim, Dan Botez, Luke Mawst
Publikováno v:
2022 28th International Semiconductor Laser Conference (ISLC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e55d7c8e70d34fefa5b5522f497d950
https://doi.org/10.23919/islc52947.2022.9943483
https://doi.org/10.23919/islc52947.2022.9943483
Publikováno v:
IET Optoelectronics. 13:12-16
The impact of post-growth thermal annealing on the internal device parameters such as internal loss ( α i ), internal differential quantum efficiency (η 0 d ) and modal material gain (Γ g 0J ) of a single-quantum well (QW) laser diodes employing G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::250be26802e386e9470e48665931d10c
https://doi.org/10.1049/iet-opt.2018.5031
https://doi.org/10.1049/iet-opt.2018.5031
Publikováno v:
Crystals, Vol 11, Iss 446, p 446 (2021)
Crystals; Volume 11; Issue 4; Pages: 446
Crystals; Volume 11; Issue 4; Pages: 446
We report a high thermal stability of kappa gallium oxide grown on c-plane sapphire substrate by metal organic chemical vapor deposition. Kappa gallium oxide is widely known as a metastable polymorph transitioning its phase when subjected to a high t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4972d0d71bddf65e9376ed18540a8262
https://www.mdpi.com/2073-4352/11/4/446
https://www.mdpi.com/2073-4352/11/4/446
Publikováno v:
Coatings, Vol 11, Iss 287, p 287 (2021)
Coatings
Volume 11
Issue 3
Coatings
Volume 11
Issue 3
We report a highly conductive gallium oxide doped with both silicon and indium grown on c-plane sapphire substrate by MOCVD. From a superlattice structure of indium oxide and gallium oxide doped with silicon, we obtained a highly conductive material
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b0e28b5d8565796b00ade5fb60b77b2
https://www.mdpi.com/2079-6412/11/3/287
https://www.mdpi.com/2079-6412/11/3/287
Autor:
Honghyuk Kim, Vinayak P. Dravid, Manijeh Razeghi, Kun He, J. J. Lee, Xiaobing Hu, Lakshay Gautam
Publikováno v:
Photonics, Vol 8, Iss 17, p 17 (2021)
Photonics
Volume 8
Issue 1
Photonics
Volume 8
Issue 1
We report the post-growth thermal annealing and the subsequent phase transition of Ga2O3 grown on c-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). We demonstrated the post-growth thermal annealing at temperatures higher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ead639a8096a4ed97e9113ea3434c7d6
https://www.mdpi.com/2304-6732/8/1/17
https://www.mdpi.com/2304-6732/8/1/17
Autor:
Honghyuk Kim, Luke J. Mawst, Zachary Lingley, Jonathan W. Choi, Padma Gopalan, Thomas F. Kuech, Yongkun Sin, Miles Brodie
Publikováno v:
Journal of Crystal Growth. 465:48-54
Semiconductor laser diodes (LD) were demonstrated employing a strained (In)GaAs quantum dot (QD) active region grown by metalorganic vapor phase epitaxy (MOVPE) on nominally exact (1 0 0) GaAs substrates using selective area epitaxy (SAE). The SAE QD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::575e53a76c45fcc12a4c0d611abc9dbd
https://doi.org/10.1016/j.jcrysgro.2017.02.046
https://doi.org/10.1016/j.jcrysgro.2017.02.046
Autor:
Thomas F. Kuech, Honghyuk Kim, Luke J. Mawst, Yingxin Guan, Susan E. Babcock, Kamran Forghani
Publikováno v:
Journal of Crystal Growth. 464:39-48
The influence of the surface step termination on the metal-organic vapor phase epitaxy of GaAs 1−y Bi y was explored by examining the epitaxial layer growth rate, composition, and morphology characteristics on the offcut and mesa-patterned (001) Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a43e6d4ff7411b3b2375b3327a3b1317
https://doi.org/10.1016/j.jcrysgro.2017.01.043
https://doi.org/10.1016/j.jcrysgro.2017.01.043