Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Honghua Du"'
Publikováno v:
Journal of Materials Research. 20:2498-2502
We explored the possibility of incorporating carbon nanotubes in a patterned and macroporous silica structure replicated from a thin polystyrene template. A V-shaped thin, vertical channel was constructed and successfully used to assemble 10.06-μm p
Publikováno v:
Journal of Materials Research. 18:878-884
Si3N4 sintered with Lu2O3 was exposed to 1 atm of oxygen and steam environments at 1200–1400 °C. The effects of additive and impurity species on the morphological development of the oxide layer were examined. Oxide layers grown on as-received samp
Autor:
Wei Zhu, G. W. Kammlott, R. M. Fleming, Sungho Jin, John A. Rogers, R. L. Willett, Honghua Du, D. W. Johnson, J. E. Graebner
Publikováno v:
Journal of Applied Physics. 86:2220-2225
Pb(Zr0.53Ti0.47)O3 (PZT) on diamond is a potentially robust structure for surface acoustic wave (SAW) device applications. We have studied the growth and physical characteristics of PZT on diamond and other substrates by pulsed laser deposition. Unde
Publikováno v:
Journal of The Electrochemical Society. 145:1355-1360
Silicon oxynitride ceramics free from sintering aids were oxidized in oxygen-argon and oxygen-nitrogen gas mixtures with varying oxygen and nitrogen partial pressures in the range of 1000 to 1300 ° ...
Publikováno v:
Supramolecular Science. 4:43-50
Self-assembled monolayers (SAMs) of octadecyltrichlorosilane (OTS) and mercapto ethanol were used to modify the surface functionality of platinum/titanium or platinum/tantalum bilayer patterns on thermally oxidized silicon wafers. The attachment of O
Publikováno v:
Journal of Materials Research. 10:1441-1447
α-SiC crystals were implanted with aluminum to a high dose at room temperature or 800 °C. Transmission electron microscopy showed that SiC was amorphized by room temperature implantation but remained crystalline after 800 °C implantation. Crystall
Publikováno v:
Journal of Materials Science Letters. 14:460-463
Surface modification of ceramics by ion implantation is a fruitful area of research, giving the prospect of improving their surface-sensitive properties such as oxidation and wear resistance, hardness, and fracture toughness, while retaining the desi
Publikováno v:
Journal of the American Ceramic Society. 86:1622-1624
A 25 nm thick α-alumina layer was deposited on a turbine-grade silicon nitride by sol-gel dip coating and subsequent heat treatment in air at 1200°C. This layer had a nanometer grain structure. Silicon nitride protected by this thin layer showed a
Publikováno v:
Journal of the American Ceramic Society. 76:330-335
Single-crystal [beta]-SiC was implanted with aluminum to 3.90 x 10[sup 17] ions/cm[sup 2] at 168 keV at 773 K. The resultant compositional and structural characteristics were studied by Rutherford backscattering spectrometry. Auger electron spectrosc
Publikováno v:
ChemInform. 29
Silicon oxynitride ceramics free from sintering aids were oxidized in oxygen-argon and oxygen-nitrogen gas mixtures with varying oxygen and nitrogen partial pressures in the range of 1000 to 1300 ° ...