Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Honghu Yang"'
Publikováno v:
The Plant Genome, Vol 16, Iss 3, Pp n/a-n/a (2023)
Abstract Clustered regularly interspaced short palindromic repeat (CRISPR)/CRISPR‐associated nuclease 9 (Cas9) has emerged as a powerful tool to generate targeted loss‐of‐function mutations for functional genomic studies. As a next step, tools
Externí odkaz:
https://doaj.org/article/5bde1d2306884725b7901e281255ce14
Autor:
Donglin Zhang, Honghu Yang, Yue Cao, Zhongze Han, Yixuan Liu, Qiqiao Wu, Yongkang Han, Haijun Jiang, Jianguo Yang
Publikováno v:
Micromachines, Vol 14, Iss 10, p 1851 (2023)
Hafnium-based ferroelectric memories are a promising approach to enhancing integrated circuit performance, offering advantages such as miniaturization, compatibility with CMOS technology, fast read and write speeds, non-volatility, and low power cons
Externí odkaz:
https://doaj.org/article/0c37c7a64f714ae69d9d2de1b3408e64
Autor:
Donglin Zhang, Bo Peng, Yulin Zhao, Zhongze Han, Qiao Hu, Xuanzhi Liu, Yongkang Han, Honghu Yang, Jinhui Cheng, Qingting Ding, Haijun Jiang, Jianguo Yang, Hangbing Lv
Publikováno v:
Micromachines, Vol 12, Iss 8, p 913 (2021)
Resistive random access memory (RRAM) is one of the most promising new nonvolatile memories because of its excellent properties. Moreover, due to fast read speed and low work voltage, it is suitable for seldom-write frequent-read applications. Howeve
Externí odkaz:
https://doaj.org/article/0791061855f14b41b4be7315658220b4
Autor:
Qiao Hu, Bo Peng, Haijun Jiang, Hangbing Lv, Donglin Zhang, Jianhua Yang, Zhongze Han, Yulin Zhao, Qingting Ding, Honghu Yang, Xuanzhi Liu, Jinhui Cheng, Yongkang Han
Publikováno v:
Micromachines
Micromachines, Vol 12, Iss 913, p 913 (2021)
Micromachines, Vol 12, Iss 913, p 913 (2021)
Resistive random access memory (RRAM) is one of the most promising new nonvolatile memories because of its excellent properties. Moreover, due to fast read speed and low work voltage, it is suitable for seldom-write frequent-read applications. Howeve