Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Honghai Deng"'
Publikováno v:
AIP Advances, Vol 13, Iss 10, Pp 105020-105020-7 (2023)
The optical properties of Al nanograting deep ultraviolet LEDs with a rough surface of sapphire are investigated by the finite-difference time-domain simulation. The rough surface of sapphire is characterized by rms amplitude and correlation length.
Externí odkaz:
https://doaj.org/article/972d5200d31041178e8c7ee6d7d943a3
Publikováno v:
Crystals, Vol 12, Iss 2, p 203 (2022)
An InAlN/GaN heterostructure has been successfully grown on GaN/sapphire and AlN/sapphire substrate by metal organic chemical vapor deposition. The whole epitaxial quality has been confirmed through X-ray diffraction, while some corresponding micro-s
Externí odkaz:
https://doaj.org/article/9663432c6094404ab90cae306e826fb6
Autor:
Haihong Yin, Changqing Song, Zhiliang Wang, Haibao Shao, Yi Li, Honghai Deng, Qinglan Ma, Ke Yu
Publikováno v:
Nanomaterials, Vol 9, Iss 3, p 317 (2019)
VO2(B), VO2(M), and V2O5 are the most famous compounds in the vanadium oxide family. Here, their gas-sensing properties were investigated and compared. VO2(B) nanoflakes were first self-assembled via a hydrothermal method, and then VO2(M) and V2O5 na
Externí odkaz:
https://doaj.org/article/08e5d79675dc4832ab401f31a53ca785
Autor:
Haibao Shao, Zhiliang Wang, Honghai Deng, Chunlei Wang, Shuhong Xu, Desong Guo, Yuan Jiang, Haihong Yin, Xiaomei Zhang, Zhenjuan Zhang
Publikováno v:
The Journal of Physical Chemistry C. 125:989-997
Although Mn2+-doped aqueous ZnSe nanocrystals (NCs) have been reported, the obtained doped NCs usually possess multiple emission peaks originated from nanocrystal bandgap, defects, and Mn-dopants. ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::754ad48bc38a6789bc4e383475e7ff73
https://doi.org/10.1021/acs.jpcc.0c09023
https://doi.org/10.1021/acs.jpcc.0c09023
Publikováno v:
AOPC 2021: Infrared Device and Infrared Technology.
Based on collection effect of photogenerated carrier, the front-illuminated planar type InGaAs short-wave infrared (SWIR) detectors were fabricated by using N-InP/i-In0.53Ga0.47As/N-InP double-hetero structure materials. The series of detectors with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50a8d798b112303fc6b72eddd2e823d5
https://doi.org/10.1117/12.2607037
https://doi.org/10.1117/12.2607037
Publikováno v:
Electronics
Volume 8
Issue 12
Volume 8
Issue 12
In this work, we fabricated dual-band 800 ×
2 short-wave infrared (SWIR) indium gallium arsenide (InGaAs) focal-plane arrays (FPAs) using N-InP/i-In0.53Ga0.47As/N-InP double-heterostructure materials, which are often applied in ocean-color
2 short-wave infrared (SWIR) indium gallium arsenide (InGaAs) focal-plane arrays (FPAs) using N-InP/i-In0.53Ga0.47As/N-InP double-heterostructure materials, which are often applied in ocean-color
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32d79d3e7a21d17ad0f4d3b5311cd32b
Publikováno v:
Materials Research Innovations. 23:294-298
Nanocomposites of zinc oxide (ZnO) nanocrystals and liquid crystal N-(4-methoxybenzylidene)-4 -ethoxybenzenamine (MB2BA) were prepared by ultrasonic dispersing technology. The MB2BA/ZnO nanocomposi...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2884fc46b82d95a3a5bcdda7dbe4fa04
https://doi.org/10.1080/14328917.2018.1464777
https://doi.org/10.1080/14328917.2018.1464777
Autor:
Yi Li, Honghai Deng, Youhua Zhu, Meiyu Wang, Takashi Egawa, Haihong Yin, Shuxin Tan, X.L. Guo
Publikováno v:
Electronic Materials Letters. 13:142-146
GaN-based light emitting diodes (LEDs) have been grown by metalorganic chemical vapor deposition on Si(111) substrate with and without 3C-SiC intermediate layer (IL). Structural property has been characterized by means of atomic force microscope, X-r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3591614950c604f631f2c423fcaa622
https://doi.org/10.1007/s13391-017-6124-7
https://doi.org/10.1007/s13391-017-6124-7
Autor:
Haibao Shao, Yi Li, Song Changqing, Honghai Deng, Qinglan Ma, Zhiliang Wang, Ke Yu, Haihong Yin
Publikováno v:
Nanomaterials
Volume 9
Issue 3
Nanomaterials, Vol 9, Iss 3, p 317 (2019)
Volume 9
Issue 3
Nanomaterials, Vol 9, Iss 3, p 317 (2019)
VO2(B), VO2(M), and V2O5 are the most famous compounds in the vanadium oxide family. Here, their gas-sensing properties were investigated and compared. VO2(B) nanoflakes were first self-assembled via a hydrothermal method, and then VO2(M) and V2O5 na
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a82b8d30826d4022595b95608ac99ac7
Publikováno v:
Optical Sensing and Imaging Technologies and Applications.
This article presents the fabrication of the front-illuminated planar type InGaAs infrared detector based on the lateral collection structure. The detector with the cutoff wavelength 1.7μm was fabricated on the NIN-type InP/InGaAs/InP hetero-structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0438458904f11b93478291531f78479c
https://doi.org/10.1117/12.2505680
https://doi.org/10.1117/12.2505680