Zobrazeno 1 - 10
of 97
pro vyhledávání: '"Honggyu Kim"'
Autor:
Zhengyu Zhang, Eitan Hershkovitz, Qi An, Liping Liu, Xiaoqing Wang, Zhifei Deng, Garrett Baucom, Wenbo Wang, Jing Zhao, Ziming Xin, Lowell Moore, Yi Yao, Md Rezwan Ul Islam, Xin Chen, Bai Cui, Ling Li, Hongliang Xin, Lin Li, Honggyu Kim, Wenjun Cai
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-12 (2024)
Abstract The ability to lubricate and resist wear at temperatures above 600 °C in an oxidative environment remains a significant challenge for metals due to their high-temperature softening, oxidation, and rapid degradation of traditional solid lubr
Externí odkaz:
https://doaj.org/article/3bcb7bcb1c08492eaba8743f883f6478
Autor:
Timothy Yoo, Eitan Hershkovitz, Yang Yang, Flávia da Cruz Gallo, Michele V. Manuel, Honggyu Kim
Publikováno v:
npj Computational Materials, Vol 10, Iss 1, Pp 1-10 (2024)
Abstract Four-dimensional scanning transmission electron microscopy, coupled with a wide array of data analytics, has unveiled new insights into complex materials. Here, we introduce a straightforward unsupervised machine learning approach that entai
Externí odkaz:
https://doaj.org/article/ee0ab2041b944cc8b05f8d08b6d4259a
Autor:
Pradip Adhikari, Anuradha Wijesinghe, Anjali Rathore, Timothy Jinsoo Yoo, Gyehyeon Kim, Sinchul Yeom, Hyoung-Taek Lee, Alessandro R. Mazza, Changhee Sohn, Hyeong-Ryeol Park, Mina Yoon, Matthew Brahlek, Honggyu Kim, Joon Sue Lee
Publikováno v:
APL Materials, Vol 12, Iss 1, Pp 011116-011116-10 (2024)
Sb thin films have attracted wide interest due to their tunable band structure, topological phases, high electron mobility, and thermoelectric properties. We successfully grow epitaxial Sb thin films on a closely lattice-matched GaSb(001) surface by
Externí odkaz:
https://doaj.org/article/395d9d056bf14088aa815d49fed29337
Autor:
Jian-Sian Li, Hsiao-Hsuan Wan, Chao-Ching Chiang, Timothy Jinsoo Yoo, Fan Ren, Honggyu Kim, Stephen J. Pearton
Publikováno v:
Crystals, Vol 13, Iss 12, p 1624 (2023)
In this study, we present the fabrication and characterization of vertically oriented NiO/β polymorph n-Ga2O3/n+ Ga2O3 heterojunction rectifiers featuring a substantial area of 1 mm2. A dual-layer SiNX/SiO2 dielectric field plate edge termination wa
Externí odkaz:
https://doaj.org/article/5e458eaa33aa411cb4692ac3dff8f09a
Autor:
Jian-Sian Li, Hsiao-Hsuan Wan, Chao-Ching Chiang, Xinyi Xia, Timothy Jinsoo Yoo, Honggyu Kim, Fan Ren, Stephen J. Pearton
Publikováno v:
Crystals, Vol 13, Iss 6, p 886 (2023)
Optimized vertical heterojunction rectifiers with a diameter of 100 µm, consisting of sputter-deposited p-type NiO forming a p–n junction with thick (10 µm) Ga2O3 drift layers grown by halide vapor phase epitaxy (HVPE) on (001) Sn-doped (1019 cm
Externí odkaz:
https://doaj.org/article/6ab67b2102f243d3bdfa8f85448ef9bc
Autor:
Tyler N. Pardue, Manik Goyal, Binghao Guo, Salva Salmani-Rezaie, Honggyu Kim, Olle Heinonen, Michelle D. Johannes, Susanne Stemmer
Publikováno v:
APL Materials, Vol 9, Iss 5, Pp 051111-051111-7 (2021)
Epitaxial strains offer unique opportunities to obtain topological states in thin films and heterostructures that do not exist in their bulk counterparts. Here, we investigate the point group symmetries of coherently strained films of cadmium arsenid
Externí odkaz:
https://doaj.org/article/abed25e439064959b1b994fd3f0d329f
Publikováno v:
IUCrJ, Vol 5, Iss 1, Pp 67-72 (2018)
Determining vacancy in complex crystals or nanostructures represents an outstanding crystallographic problem that has a large impact on technology, especially for semiconductors, where vacancies introduce defect levels and modify the electronic struc
Externí odkaz:
https://doaj.org/article/93eab849119f4f0a9274f8c0d82188a8
Publikováno v:
APL Materials, Vol 6, Iss 5, Pp 056102-056102-5 (2018)
Magnetotransport and magnetism of epitaxial SmTiO3/EuTiO3 heterostructures grown by molecular beam epitaxy are investigated. It is shown that the polar discontinuity at the interface introduces ∼3.9 × 1014 cm−2 carriers into the EuTiO3. The itin
Externí odkaz:
https://doaj.org/article/dcc5852d712f49b2b7d24d7bb56b1cae
Publikováno v:
APL Materials, Vol 5, Iss 9, Pp 096101-096101-6 (2017)
We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen. The use of the precursor overcomes a number of issues encountered
Externí odkaz:
https://doaj.org/article/60feb270b1874931b631da0ca3034ec1
Publikováno v:
APL Materials, Vol 4, Iss 12, Pp 126110-126110-6 (2016)
Epitaxial, strain-engineered Dirac semimetal heterostructures promise tuning of the unique properties of these materials. In this study, we investigate the growth of thin films of the recently discovered Dirac semimetal Cd3As2 by molecular beam
Externí odkaz:
https://doaj.org/article/c61ec2b465094d739a9929008d3bd869