Zobrazeno 1 - 10
of 89
pro vyhledávání: '"Hongchang Cheng"'
Publikováno v:
Journal of Materials Research and Technology, Vol 23, Iss , Pp 2177-2188 (2023)
As the core component of the electron accelerator, the electron source is responsible for providing high-quality electron beams. GaN has a wide bandgap and must be driven by an ultraviolet laser, making it a strong candidate for photocathode electron
Externí odkaz:
https://doaj.org/article/fb9d9b3137154200b9a5a13e3f046912
Autor:
Xin Guo, Feng Shi, Tiantian Jia, Ruoyu Zhang, Jinjuan Du, Peng Chen, Haoyu Wu, Hongchang Cheng, Yijun Zhang
Publikováno v:
IEEE Photonics Journal, Vol 15, Iss 2, Pp 1-5 (2023)
To improve the understanding of the optical image resolution of transmission-mode GaAs photocathode, by establishing the surface scattering analysis model of AlGaAs window layer, we have researched the effect of the surface height distribution varian
Externí odkaz:
https://doaj.org/article/b3453800c93c4977a5bbf979b0cfe63c
Autor:
Jinjuan Du, Hongchang Cheng, Yang Li, Peng Chen, Ruoyu Zhang, Xin Guo, Yufeng Zhu, Zhuang Miao, Yijun Zhang, Lei Liu
Publikováno v:
AIP Advances, Vol 13, Iss 9, Pp 095301-095301-6 (2023)
The AlGaN photocathode with a superlattice emission layer was grown by metal organic chemical vapor deposition. The existence of the superlattice structure was confirmed using a transmission electron microscope, and its optical and electrical propert
Externí odkaz:
https://doaj.org/article/10efcc80239748d2a9da60e0270ba56a
Autor:
Ruoyu Zhang, Xin Guo, Yang Li, Haoyu Wu, Hongjin Qiu, Tiantian Jia, Xuchuan Liu, Linyu Gan, Peng Chen, Hongchang Cheng
Publikováno v:
AIP Advances, Vol 13, Iss 7, Pp 075318-075318-7 (2023)
An infrared perfect absorber structure is designed based on GaAs/Au/SiO2 metamaterial with numerical simulation, in which gold split ring resonators (SRR) embedded in the GaAs layer. The absorption exceeds 99% at 1360 nm under the plane wave excitati
Externí odkaz:
https://doaj.org/article/7f1d33e7d7614ec094c3dff541c83212
Autor:
Ziheng Wang, Yijun Zhang, Shiman Li, Shan Li, Jingjing Zhan, Yunsheng Qian, Feng Shi, Hongchang Cheng, Gangcheng Jiao, Yugang Zeng
Publikováno v:
Journal of Materials Research and Technology, Vol 19, Iss , Pp 2008-2017 (2022)
To enhance the quantum efficiency of GaAs-based photocathode in the near-infrared range, a laminated graded-bandgap photocathode structure consisting of a distributed Bragg reflection layer and a graded-bandgap emission layer is proposed. The theoret
Externí odkaz:
https://doaj.org/article/167409627b2943569a4a1e1df6f2f22a
Publikováno v:
ACS Applied Materials & Interfaces; 7/31/2024, Vol. 16 Issue 30, p39818-39826, 9p
Publikováno v:
MRS Communications. 13:162-168
Autor:
Shan Li, Yijun Zhang, Kaimin Zhang, Jingzhi Zhang, Jingjing Zhan, Feng Shi, Gangcheng Jiao, Hongchang Cheng, Cheng Feng
Publikováno v:
Journal of Colloid and Interface Science. 613:117-125
Effects of geometric parameters on optical absorption characteristics of InGaN nanostructured arrays
Publikováno v:
Modern Physics Letters B. 37
In recent years, with the development of wide-spectrum response photodetectors, InGaN as a semiconducting material has been widely studied. The nanowire array structure has excellent trapping ability, but different structures and shapes have differen