Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Hong-qiang Lu"'
Autor:
Da-wai Gong, Xun Wang, Xiangjiu Zhang, Jihuang Hu, Xuekun Lu, Hong-qiang Lu, Xiang-jun Chen, Wei-ning Huang, Yongliang Fan
Publikováno v:
Journal of Crystal Growth. 150:964-968
The chemical reaction of Ge beam with thermally grown SiO 2 in ultra-high vacuum (UHV) producing volatile Ge and Si oxides was described. Using this experimental result, a Ge film grown in the windows of the SiO 2 mask at the Si(111) substrate withou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::047dff4cac5fc4930e4d902a70846bdb
https://doi.org/10.1016/0022-0248(95)80083-o
https://doi.org/10.1016/0022-0248(95)80083-o
Autor:
David C. Miller, Ming Zhang, Hong-qiang Lu, Bing-Zong Li, Zhi-Guang Gu, Xiang‐Jiu Zhang, Robert G. Aitken, Wen-Jie Qi, G. S. Dong, Wei-Ning Huang
Publikováno v:
Journal of Applied Physics. 77:1086-1092
The solid state reaction of Co,Ti with an epitaxially grown Si1−xGex strained layer is investigated in this article. The reaction was performed in a rapid thermal annealing system. The resulting films were characterized by Rutherford backscattering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebcf9bcb5c3e72403079ae64edacc316
https://doi.org/10.1063/1.358969
https://doi.org/10.1063/1.358969
Conference
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