Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Hong-kai Mao"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1010-1015 (2020)
In this work, an improved 4H-SiC insulated gate bipolar transistor (IGBT), or CTH-IGBT, with a trench p-polySi/p-SiC heterojunction on the backside of the device is proposed to reduce the turn-off energy loss (Eoff) and turn-off time (Toff). The elec
Externí odkaz:
https://doaj.org/article/430792c9d5a04dc0bbf1b253e659f083
Publikováno v:
Micromachines
Volume 10
Issue 12
Volume 10
Issue 12
In this work, an insulated gate bipolar transistor (IGBT) is proposed that introduces a portion of the p-polySi/p-SiC heterojunction on the collector side to reduce the tail current during device turn-offs. By adjusting the doping concentration on bo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1793e53b1a432cf1d10e1c013ab722ae
https://doi.org/10.3390/mi10120815
https://doi.org/10.3390/mi10120815