Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Hong-Yu Peng"'
Publikováno v:
Pharmacological Research - Modern Chinese Medicine, Vol 5, Iss , Pp 100202- (2022)
Objective: To evaluate the safety, potential benefits and possible mechanisms of the extract of Si Ben Cao (SBC), a traditional Chinese medicine formula composed of four herbs, for skin whitening. Methods: The reflux method was performed to prepare t
Externí odkaz:
https://doaj.org/article/cb63d89363a54d8692ec09f6e9006191
Publikováno v:
Chinese Medical Journal, Vol 131, Iss 12, Pp 1444-1449 (2018)
Background: Acute coronary syndrome (ACS) is closely related to unstable plaques and secondary thrombosis. The inflammatory cells in plaques and their inflammatory products may be the cause for plaque instability and ruptures. The study aimed to disc
Externí odkaz:
https://doaj.org/article/25f040e4ca5f445bb53fad1fc4c54864
Autor:
Xu-Wei Zheng, Dong-Hui Zhao, Hong-Yu Peng, Qian Fan, Qin Ma, Zhen-Ye Xu, Chao Fan, Li-Yu Liu, Jing-Hua Liu
Publikováno v:
Chinese Medical Journal, Vol 129, Iss 5, Pp 505-510 (2016)
Background: The crush and the culotte stenting were both reported to be effective for complex bifurcation lesion treatment. However, their comparative performance remains elusive. Methods: A total of 300 patients with coronary bifurcation lesions wer
Externí odkaz:
https://doaj.org/article/304c0cc94c2c4dc88c57df493e13a029
Autor:
Hong Yu Peng, Ya Fei Liu, Ze Yu Chen, Qian Yu Cheng, Shan Shan Hu, James Watson, Kristin Sampayan, Stephen Sampayan, Balaji Raghothamachar, Michael Dudley
Publikováno v:
Defect and Diffusion Forum. 425:43-49
A highly efficient, high-voltage power switching technology, the Optical Transconductance Varistor (OTV) is being developed based on the photoconductive property of 6H-SiC. The behavior of the dislocations in 6H-SiC under the application of voltage a
Autor:
Shan Shan Hu, Shuai Fang, Ya Fei Liu, Qian Yu Cheng, Hong Yu Peng, Ze Yu Chen, Yu Han Gao, Chao Gao, Balaji Raghothamachar, Michael Dudley
Publikováno v:
Materials Science Forum. 1089:45-50
In 4H-silicon carbide crystals, basal plane slip is the predominant deformation mechanism. However, prismatic slip is often observed in single crystals grown by the physical vapor transport method as the diameter expands to 6 inches or larger. Therma
Autor:
Ze Zheng, Zi chao Cheng, Shao ping Wang, Shi ying Li, Jian Wang, Hong yu Peng, Zheng Wu, Wen zheng Li, Yun Lv, Jia yu Tian, Shu juan Cheng, Jing hua Liu
Publikováno v:
Cardiology Research and Practice, Vol 2019 (2019)
Objectives. Chronic total occlusion (CTO) is prevalent in patients with prior coronary artery bypass grafting (CABG). However, data available concerning the prevalence of new-onset CTO of native vessels in patients with prior CABG is limited. Therefo
Externí odkaz:
https://doaj.org/article/497bf351ecfc4151974f39d26f230dd0
Autor:
Ya Fei Liu, Hong Yu Peng, Ze Yu Chen, Qian Yu Cheng, Shan Shan Hu, Balaji Raghothamachar, Michael Dudley, Ramon Collazo, Zlatko Sitar, James Tweedie, Michal Bockowski, Vincent Meyers, F. Shadi Shahedipour-Sandvik, Bing Jun Li, Jung Han
Publikováno v:
Materials Science Forum. 1062:351-355
Synchrotron X-ray topography techniques are used to characterize the microstructures in gallium nitride materials being developed for selective area doping for power electronic applications. Bulk substrates grown by different methods, epitaxial layer
Autor:
Qian Yu Cheng, Hong Yu Peng, Shan Shan Hu, Ze Yu Chen, Ya Fei Liu, Balaji Raghothamachar, Michael Dudley
Publikováno v:
Materials Science Forum. 1062:366-370
Understanding the depth from which contrast from dislocations is still discernible (the effective penetration depth of the X-rays) in grazing-incidence synchrotron monochromatic beam X-ray topography is of great interest as it enables three-dimension
Autor:
Ze Yu Chen, Hong Yu Peng, Ya Fei Liu, Qian Yu Cheng, Shan Shan Hu, Balaji Raghothamachar, Michael Dudley, Reza Ghandi, Stacey Kennerly, Peter Thieberger
Publikováno v:
Materials Science Forum. 1062:361-365
4H-SiC wafers with 12 um epilayer were implanted at the Tandem Van de Graaff facility at Brookhaven National Laboratory with tunable energy from 13 MeV up to 66 MeV. Lattice strains introduced by the implantation process were characterized in detail
Autor:
Hong Yu Peng, Ze Yu Chen, Ya Fei Liu, Qian Yu Cheng, Shan Shan Hu, Xian Rong Huang, Lahsen Assoufid, Balaji Raghothamachar, Michael Dudley
Publikováno v:
Materials Science Forum. 1062:356-360
Synchrotron monochromatic beam X-ray topography has been widely applied to characterize structural defects in SiC crystals. Using ray tracing simulations, the dislocation contrast in X-ray topography under strong diffraction conditions (diffraction t