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pro vyhledávání: '"Hong-Wei Lui"'
Publikováno v:
Materials Science and Engineering: A. 457:77-83
The sputtered oxide films of AlCoCrCu0.5NiFe high-entropy alloy were deposited on the silicon wafer using radio frequency sputter system, and subsequently were annealed at 500, 700 or 900 °C. Surprisingly, the sputtered films are of simple structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::277997197756e5904fee02c24a53bfa4
https://doi.org/10.1016/j.msea.2006.12.001
https://doi.org/10.1016/j.msea.2006.12.001
