Zobrazeno 1 - 10
of 190
pro vyhledávání: '"Hong-Shick Min"'
Publikováno v:
Journal of Applied Physics; 6/15/2006, Vol. 99 Issue 12, p123719, 10p, 2 Diagrams, 11 Graphs
Publikováno v:
IEEE Transactions on Electron Devices. 57:1110-1118
This paper presents a study on 1/f noise in MOSFETs under large-signal (LS) operation, which is important in CMOS analog and RF integrated circuits. The flicker noise is modeled with noise sources as a perturbation in the semiconductor equations empl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::999a74263ee4e35b8113e2a744341680
https://doi.org/10.1109/ted.2010.2043186
https://doi.org/10.1109/ted.2010.2043186
Autor:
Sung-Min Hong, Hong Shick Min, Jun-Myung Woo, In-Young Chung, Hong-Hyun Park, Young June Park
Publikováno v:
IEEE Transactions on Electron Devices. 56:2481-2488
The statistical noise analysis of the CMOS image sensors in the dark condition has been performed with a newly developed 3-D technology computer-aided design framework. The noise histograms of the correlated double sampling output, due to the random
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c65a329f06628496892b3b3f2b4b696
https://doi.org/10.1109/ted.2009.2030981
https://doi.org/10.1109/ted.2009.2030981
Autor:
In-Young Chung, Young June Park, Sung-Joo Hong, Sang-Don Lee, Sungwook Park, Myoung Jin Lee, Hong-Hyun Park, Sung-Woong Chung, Sung-Min Hong, Soo-Young Park, Chang-Ki Baek, Seonghoon Jin, Hong Shick Min, Jae-Goan Jeong
Publikováno v:
IEEE Transactions on Electron Devices. 54:3325-3335
We have experimentally analyzed the leakage mechanism and device degradations caused by the Fowler-Nordheim (F-N) and hot carrier stresses for the recently developed dynamic random-access memory cell transistors with deeply recessed channels. We have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af661eccf10930d580e5ffd84b835043
https://doi.org/10.1109/ted.2007.908882
https://doi.org/10.1109/ted.2007.908882
Publikováno v:
IEEE Transactions on Electron Devices. 53:2195-2201
A technology computer-aided design framework that can predict the phase noise spectrum of an oscillator using nonlinear perturbation analysis is developed. The device-circuit mixed-mode simulation technique based upon the shooting-Newton method is ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b41827e0e5e3ed4e94ee3b43f6c757df
https://doi.org/10.1109/ted.2006.880166
https://doi.org/10.1109/ted.2006.880166
Autor:
Hong Shick Min, Jeong-Hyong Yi, Seonghoon Jin, Jaehoon Choi, Dae Gwan Kang, Inyoung Chung, Young June Park, Myoung Jin Lee
Publikováno v:
IEEE Transactions on Electron Devices. 53:2344-2350
The authors have developed an efficient and accurate method to obtain the data retention time distribution of DRAM from the physics-based device simulation and the numerical integration of the probability space composed of three independent random va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8db6fc6de69dded4711e61d23d91e4a1
https://doi.org/10.1109/ted.2006.880821
https://doi.org/10.1109/ted.2006.880821
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 6:334-342
In order to explain polarity-dependent device degradation observed in polysilicon-oxide-nitride-oxide-silicon (SONOS) transistors, a physics-based model is proposed. Comparing the trends in polarity-dependent electrical characteristics between two di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee4fbbabec42dd6dde7aef3f2b61f268
https://doi.org/10.1109/tdmr.2006.876614
https://doi.org/10.1109/tdmr.2006.876614
Autor:
Dong won Kang, Jung Sang Suh, Jun Ho Cheon, Young June Park, Lily Nari Kim, Hong Shick Min, Qing Lin, Byoung Don Gong
Publikováno v:
Semiconductor Science and Technology. 21:686-690
A novel capacitor, named an ECIS (electrolyte–carbon nanotubes–insulator–semiconductor), is proposed in this paper. By using a bonding technique, the characteristics of both the field-effect-based EIS (electrolyte–insulator–semiconductor) c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb619096a905c2ee5d9b2c922d2f3c08
https://doi.org/10.1088/0268-1242/21/5/021
https://doi.org/10.1088/0268-1242/21/5/021
Publikováno v:
IEEE Transactions on Electron Devices. 52:2422-2429
We have developed a comprehensive TCAD framework that can predict the data retention time distribution of a dynamic random access memory (DRAM) chip using the information about the designed cell transistor by coupled physics-based device and statisti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a2116c6904a9c69baaae9716dc683f3
https://doi.org/10.1109/ted.2005.857185
https://doi.org/10.1109/ted.2005.857185
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 24:862-868
This paper proposes and investigates a short-channel MOSFET model down to a 0.1-/spl mu/m regime for the frequency-domain analysis of the device operation through the harmonic balance technique. The efficiency and the preciseness of our method are va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e942352531902acc88678dd2901a838
https://doi.org/10.1109/tcad.2005.847896
https://doi.org/10.1109/tcad.2005.847896