Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Hong-Seon Yang"'
Autor:
Byung-Gook Park, Joung-Eob Lee, Dong Seup Lee, Seongjae Cho, Hong-Seon Yang, Kwon-Chil Kang, Jung Han Lee
Publikováno v:
IEICE Transactions on Electronics. :540-545
We propose a gate-all-around tunnel field effect transistor (GAA TFET) having a n-doped layer at the source junction and investigate its electrical characteristics with device simulation. By introducing the n-doped layer, band-to-band tunneling area
Autor:
Kwon-Chil Kang, Joung-Eob Lee, Dong Seup Lee, Seongjae Cho, Sangwoo Kang, Hong-Seon Yang, Jung Han Lee, Byung-Gook Park, Jong Duk Lee, Sang Hyuk Park
Publikováno v:
IEICE Transactions on Electronics. :647-652
A Recessed-Channel Dual-Gate Single Electron Transistor (RCDG-SET) which has the possibility of room temperature operation is proposed. Side gates of a RCDG-SET form electrical tunneling barriers around a recessed channel, which is newly introduced.
Autor:
Yong Soo Kim, Kwan-Yong Lim, Se Aug Jang, Min Gyu Sung, Hong-Seon Yang, Jinwoong Kim, Heung-Jae Cho, Yun Taek Hwang, Ja Chun Ku
Publikováno v:
Japanese Journal of Applied Physics. 47:2704-2709
We investigated the effect of boron at the interface of the diffusion barrier in tungsten polymetal gate stacks on the gate contact interfacial resistance between tungsten and p+ polycrystalline silicon (poly-Si). B–N formation can occur at the bot
Autor:
Seung Ryong Lee, Se-Aug Jang, Ja-Chun Ku, Hong-Seon Yang, Min Gyu Sung, Heung-Jae Cho, Kwan-Yong Lim, Tae-Yoon Kim, Yong Soo Kim, Jinwoong Kim
Publikováno v:
Japanese Journal of Applied Physics. 46:7256-7262
Gate oxide reliability characteristics using different diffusion barrier metals for a tungsten polycrystalline silicon (poly-Si) gate stack were investigated in detail. The insertion of a thin WSix layer in a tungsten poly gate stack could effectivel
Autor:
Min Gyu Sung, Se-Aug Jang, Seung-Ho Pyi, Yong Soo Kim, Moon Sig Joo, Heung-Jae Cho, Jinwoong Kim, Tae-Yoon Kim, Ju-Hee Lee, Seung Ryong Lee, Kwan-Yong Lim, Hong-Seon Yang
Publikováno v:
Japanese Journal of Applied Physics. 46:2134-2138
Tungsten dual polygate (W-DPG) stacks with diffusion barriers formed by the Ti(N) process were investigated in terms of gate contact resistance (Rc) and the polydepletion effect. The Ti layer in the Ti/WN diffusion barrier is found to be converted in
Autor:
Se-Aug Jang, Nojung Kwak, Jinwoong Kim, Jaehyoung Koo, Seung-Ho Pyi, Hong-Seon Yang, Moon Sig Joo, Kwon Hong, Jaemun Kim, Seung Ryong Lee, Seung-Woo Shin, Myung-Ok Kim
Publikováno v:
Japanese Journal of Applied Physics. 46:2193-2196
We demonstrate the electrical properties and reliability of ZrO2–Al2O3 nanolaminates as high-κ dielectric materials in a composite oxide–high-κ-oxide (OKO) stack for floating-gate flash memory devices with 40 nm technology nodes and beyond. The
Autor:
Hong Seon Yang, Joo Wan Lee, Ho Jung Sun, Jinwoong Kim, Jun-Ki Kim, Hyunchul Sohn, Soo-Hyun Kim
Publikováno v:
Japanese Journal of Applied Physics. 43:8007-8012
We attempted to explain the phenomenon that the electric resistivity of tungsten film increases as the thickness decreases and that physical vapor-deposited (PVD) tungsten shows a much lower resistivity than chemical vapor-deposited (CVD) tungsten. T
Autor:
Min Gyu Sung, Hong-Seon Yang, Jinwoong Kim, Seung-Ho Pyi, Kwang-Ok Kim, Hyunchul Sohn, Se-Aug Jang, Yong Soo Kim, Heung-Jae Cho, Kwan-Yong Lim, Seung Ryong Lee, Ja-Chun Ku
Publikováno v:
IEEE Electron Device Letters. 29:338-340
This letter reveals the physical and electrical properties of silicon dioxide (Si02) formed by the plasma selective oxidation (plasma selox) using 02 and H2 gas mixture, which is applicable to sub-50-nm tungsten-polymetal gate memory devices without
Autor:
K. N. Ritz, J. Opsal, Woo Sang-Ho, Hong-Seon Yang, SeoEun Lee, Seung-Woo Shin, Il-Keoun Han, Ji On Kim, Hoon-Jung Oh
Publikováno v:
Journal of The Electrochemical Society. 145:3935-3940
A novel approach for monitoring the capacitance using optical data from the material characteristics of hemispherical grain (HSG) polycrystalline silicon film is reported. This noncontact optical method provides indirect measurement of electrical cap
Autor:
S. W. Seo, S. M. Yi, Hyung Seok Kim, E. Park, N. Park, Seokkiu Lee, Keum Hwan Noh, Joong-Jung Kim, Hong-Seon Yang, Sung-Kye Park, Tae-Un Youn
Publikováno v:
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.