Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Hong-Liang Lv"'
Publikováno v:
Materials Science Forum. 924:667-670
P-type implanted metal oxide semiconductor capacitors (MOSCAPs) and metal oxide semiconductor field effect transistors (MOSFETs) have been fabricated. The characteristics of hole trapping at the interface of SiO2/SiC are investigated through capacita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18747fcebf5d1a7dcd4a6c73445a7b3c
https://doi.org/10.4028/www.scientific.net/msf.924.667
https://doi.org/10.4028/www.scientific.net/msf.924.667
Publikováno v:
Materials Science Forum. 924:449-452
The characteristics of near interface electron and hole traps in n-type 4H-SiC MOS capacitors with and without nitric oxide (NO) passivation have been systematically investigated. The hysteresis of the bidirectional capacitance-voltage (C-V) and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0207e93783b2a470ba1dd2eaf863be0c
https://doi.org/10.4028/www.scientific.net/msf.924.449
https://doi.org/10.4028/www.scientific.net/msf.924.449
Autor:
Hong Liang Lv, Yi Men Zhang, Xiaoyan Tang, Qing Wen Song, Chao Han, Yi Meng Zhang, Yuming Zhang, Yan Jing He
Publikováno v:
Solid-State Electronics. 129:175-181
A lightly doped P-well field-limiting rings (FLRs) termination on 4H-SiC vertical double-implanted metal-oxide-semiconductor field-effect transistors (VDMOSFETs) has been investigated. Based on the simulation, the proposed termination applied to 4H-S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b01bd615496b4e64052712c76d4853e
https://doi.org/10.1016/j.sse.2016.11.008
https://doi.org/10.1016/j.sse.2016.11.008
Autor:
Hong Liang Lv, Yi Men Zhang, Yuan Hao, Xiaoyan Tang, Yuehu Wang, Yu Fei Zhou, Yuming Zhang, Qing Wen Song
Publikováno v:
Materials Science Forum. :812-815
Based on the theoretical analysis and the simulation results of the ion implantation process and the floating Junction structure, a 4H-SiC SBD with floating junction (FJ_SBD) is fabricated. Compared with the on-resistance 5.13 mΩ·cm2 of conventiona
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dc2a1b9665a7e60edcf09dc99488919
https://doi.org/10.4028/www.scientific.net/msf.778-780.812
https://doi.org/10.4028/www.scientific.net/msf.778-780.812
Publikováno v:
Mathematical Problems in Engineering, Vol 2008 (2008)
Based on restricted variational principle, a novel method for interval wavelet construction is proposed. For the excellent local property of quasi-Shannon wavelet, its interval wavelet is constructed, and then applied to solve ordinary differential e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::21b02403de191b8b3cf9a2d3edb2e89b
https://doi.org/10.1155/2008/629253
https://doi.org/10.1155/2008/629253
Publikováno v:
Fourth International Workshop on Junction Technology, 2004 (IWJT '04); 2004, p183-185, 3p
Autor:
Jing Zhang, Hong-Liang Lv, Hai-Qiao Ni, Shi-Zheng Yang, Xiao-Ran Cui, Zhi-Chuan Niu, Yi-Men Zhang, Yu-Ming Zhang
Publikováno v:
Chinese Physics B; Oct209, Vol. 28 Issue 11, p1-1, 1p
Publikováno v:
Chinese Physics B; Oct2018, Vol. 27 Issue 10, p1-1, 1p
Publikováno v:
Chinese Physics B; Oct2016, Vol. 25 Issue 10, p1-1, 1p
Autor:
Qing-Wen Song, Xiao-Yan Tang, Hao Yuan, Yue-Hu Wang, Yi-Meng Zhang, Hui Guo, Ren-Xu Jia, Hong-Liang Lv, Yi-Men Zhang, Yu-Ming Zhang
Publikováno v:
Chinese Physics B; Apr2016, Vol. 25 Issue 4, p1-1, 1p