Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Hong-Kook Min"'
Autor:
Kyongsik Yeom, Hyo-sang Lee, Ji-Sung Kim, Young-cheon Jeong, Gitae Jeong, Yong-Kyu Lee, Minji Seo, S. L. Cho, MyeongHee Oh, Eunmi Hong, HyunChang Lee, Seong-Ho Yoon, Hyuk-Jun Sung, Sangjin Lee, Joonsuk Kim, Jinchul Park, D.H. Kim, Cheol-min Kim, E. S. Jung, Hong-Kook Min, Jongsung Woo, Chang-Min Jeon, Jong-Shik Yoon, Ki-Chul Park
Publikováno v:
2019 Symposium on VLSI Technology.
Based on robust 28-nm embedded flash (eFlash) process, IoT One-chip for high-speed and low power applications which MCU-chip (10Mb eFlash) and connectivity-chip (BLE/Zigbee) are integrated for the first time. By introducing new devices on 28-nm low-p
Autor:
Sunghee Cho, Min-Su Kim, Jaejune Jang, Kyongsik Yeom, Duck-Hyung Lee, Yong-Seok Chung, Ji-Sung Kim, Kyung-Soo Min, Chang-Min Jeon, Dong-Hyun Kim, Hong-Kook Min, MyeongHee Oh, Jongsung Woo, Hyunug Kang, Bo-Young Seo, Hyo-sang Lee, Yong-Kyu Lee, K. Kim
Publikováno v:
2017 Symposium on VLSI Technology.
We developed a 4Mb split-gate e-flash on 28-nm low-power HKMG logic process, which demonstrates the smallest bit-cell size (0.03×-um2) for high performance IoT applications. High speed operation (25us write time and 2ms erase operation) and robust r
Autor:
Ji-sung Kim, Duck-Hyung Lee, Bo-Young Seo, Min-Su Kim, Dong-Hyun Kim, Bongsang Lee, Hyo-sang Lee, Chang-Hyun Park, Yong-Kyu Lee, Bae-Seong Kwon, Ga-Young Lee, Chang-Min Jeon, Sung-Hee Cho, Hong-Kook Min, Eunkang Park
Publikováno v:
2016 IEEE 8th International Memory Workshop (IMW).
We present a highly scalable 2nd generation 45-nm split-gate embedded flash, which has been scaled of 40% unit-cell-size (almost same size with 28-nm technology node) from the 1st generation 45-nm embedded flash without using extra masks, processes a
Autor:
Se Yeoul Park, Hong Kook Min, Yong-Tae Kim, Kyounghwan Kim, So Ra Park, Jeong-Uk Han, Byung Sup Shim, Seung Jin Yang
Publikováno v:
2011 International Reliability Physics Symposium.
Different from the conventional study to improve the pad reliability against the peel-off, this study focuses on the probability that the peel-off could be originated from the perpendicular pushing down mechanical stress (PPMS) during the ball mounti
Autor:
Kyoung-Hwan Kim, Hong Kook Min, Se Yeoul Park, So Ra Park, Seung Jin Yang, Byung Sup Shim, Yong Tae Kim, Jeong-Uk Han
Publikováno v:
2011 IEEE International Reliability Physics Symposium (IRPS); 2011, p5F.2.1-5F.2.6, 1p