Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Hong-Jyh Li"'
Autor:
Hong-Jyh Li, 李鴻志
83
We developed a new scheme based on Shannon entropy to characterize chaos. With the help of this new method, we extended the utilization of controlling chaos to a much broader application possibility, especially in communication. By imposing w
We developed a new scheme based on Shannon entropy to characterize chaos. With the help of this new method, we extended the utilization of controlling chaos to a much broader application possibility, especially in communication. By imposing w
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/50006775923884927206
Autor:
E. Graetz, M. Shevelev, Sanjay K. Banerjee, P. Kohli, Taras A. Kirichenko, Swaroop Ganguly, Hong Jyh Li
Publikováno v:
Journal of Electronic Materials. 31:214-219
We propose a new method for activation of source/drain junctions by microwave annealing. A study with B/BF2 implants at ultralow energies (300/500 eV) and high doses (1E15/5E15 cm−2) was completed. The samples were subjected to a high-power cyclotr
Autor:
Taras A. Kirichenko, Raghu Srinivasa, Hong Jyh Li, Sanjay K. Banerjee, Swaroop Ganguly, Vikas Agarwal, Li Lin, P. Kohli
Publikováno v:
Journal of Applied Physics. 91:2023-2027
We present a comparative study of BCl2+ and BBr2+, and the traditionally used BF2+, as implant species for the formation of ultrashallow P+-N junctions. From “as-implanted” profiles, a large reduction in channeling tail has been observed for the
Autor:
Hong-Jyh Li Hong-Jyh Li, T.A. Kirichenko, P. Kohli, S.K. Banerjee, E. Graetz, R. Tichy, P. Zeitzoff
Publikováno v:
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on.
Autor:
Jyh-Long Chern, Hong-Jyh Li
Publikováno v:
Physics Letters A. 206:217-221
A variety of dynamic states can be created from chaos by using a weak periodic perturbation. Since these states can be further classified by some characteristic index, here the Shannon entropy, we suggest that a temporal programming of small paramete
Autor:
Sanjay K. Banerjee, Peter Zeitzoff, Hong Jyh Li, Taras A. Kirichenko, P. Kohli, Swaroop Ganguly
Publikováno v:
Applied Physics Letters. 77:2683-2685
We model B diffusion in the category of equilibrium diffusivity in the presence of other species using ab initio calculations. The result shows that in the presence of other atoms X (X=F, N, C, Al, Ga, In, and Ge), the migration energy for B along th
Autor:
Jeffrey J. Peterson, Siddarth A. Krishnan, Paul Kirsch, Hong-Jyh Li, Byoung Hun Lee, Rino Choi, J.C. Lee, R. Harris, Chadwin D. Young, Manuel Quevedo-Lopez
Publikováno v:
2005 IEEE International Integrated Reliability Workshop.
Positive bias temperature instability (PBTI) is investigated in ultra-thin high-k films as a function of dielectric thickness on two different interfaces: SiO/sub 2/ and SiON. It is shown that charge trapping-induced threshold voltage (V/sub TH/) ins
Autor:
Jeff J. Peterson, Gennadi Bersuker, Paul Kirsch, J.C. Lee, Siddarth A. Krishnan, Chadwin D. Young, Manuel Quevedo-Lopez, Hong-Jyh Li, Rino Choi, Byoung Hun Leed
Publikováno v:
2006 IEEE International Reliability Physics Symposium Proceedings.
The impact of nitrogen on charge trapping induced positive bias temperature instability (PBTI) characteristics in HfSiON/TiN gate stacks is investigated. While thickness is found to be the primary parameter to reduce charge trapping, plasma nitrogen
Autor:
Hong Jyh Li, Byoung Hun Lee, Peter Zeitzoff, J.H. Sim, Jeff J. Peterson, J.C. Lee, Gennadi Bersuker, J. Gutt, R. Harris, George A. Brown, Ken Matthews, Siddarth A. Krishnan, Paul Kirsch, Chadwin D. Young, Rino Choi
Publikováno v:
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..
To introduce high-k dielectrics into conventional CMOS product flow, reliability issues of high-k gate stacks need to be addressed. Although several studies have focused on this issue, the physical mechanism of stress-induced degradation in high-k di
Autor:
Byoung Hun Lee, Husam N. Alshareef, George A. Brown, Prashant Majhi, Gennadi Bersuker, Huang-Chun Wen, Chadwin D. Young, Peter Zeitzoff, M. Gardner, Joel Barnett, Ken Matthews, Sundararaman Gopalan, Patrick S. Lysaght, Seung-Chul Song, Rino Choi, P. Kirsh, Howard R. Huff, Kisik Choi, J. Gutt, Jeffrey J. Peterson, L. Larson, R.W. Murto, J.H. Sim, C. Ramiller, C. Y. Kang, Naim Moumen, R. Harris, Craig Huffman, Hong-Jyh Li
Publikováno v:
Scopus-Elsevier
Fast transient charging effects (FTCE) are found to be the source of various undesirable characteristics of high-k devices, such as V/sub th/ instability, low DC mobility and poor reliability. The intrinsic characteristics of high-k transistors free