Výsledky vyhledávání - "Hong-Jie Dong"

Akademický článek

Electron-insulator interaction and secondary electron yield at any Kelvin temperature

Autor: Ai-Gen Xie, Hong-Jie Dong, Zheng Pan

Publikováno v: Results in Physics, Vol 28, Iss , Pp 104554- (2021)

The universal formulae for λ(χreal, Eg, T) and λ(χreal, Eg, T)p of insulator having less impurities are experimentally proved, where λ(χreal, Eg, T) is the mean escape depth at Kelvin temperature T of secondary electrons emitted from insulators

Externí odkaz: https://doaj.org/article/a0339fc779214ca8bcabd7b632690e58

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Akademický článek

An electron-induced secondary electron model for photoelectric sensitivity and quantum efficiency of metal surfaces

Autor: Ai-Gen Xie, Hong-Jie Dong, Zheng Pan

Publikováno v: Results in Physics, Vol 26, Iss , Pp 104350- (2021)

This paper studies an electron-induced secondary electron model ESEM for photoelectric sensitivity PS and quantum efficiency QE of metal surfaces near threshold frequency γ0, which was developed from Sommerfeld’s theory and the theories of transpo

Externí odkaz: https://doaj.org/article/6664ae4497a3417ab51730bfeb78dba7

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Akademický článek

Secondary electron emission from insulators and negative electron affinity semiconductors

Autor: Ai-Gen Xie, Zheng Pan, Hong-Jie Dong, Chen-Nan Song

Publikováno v: Results in Physics, Vol 20, Iss , Pp 103745- (2021)

Based on expression of primary range R and the R at Epo ≥ 10.0 keV and L at Epo ≥ 1.0 keV calculated by ESTAR program [1], the method of obtaining formula for R at Epo ≥ 1.0 keV is presented; where Epo is incident energy of primary electron, an

Externí odkaz: https://doaj.org/article/b83af9c2ec364a54a9bb67aa700b8dd3

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Expressions of Electron Escape Probability and Photo-Emission from Metals

Autor: Yi-Fan Liu, Ai-Gen Xie, Jing Tang, Hong-Jie Dong

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::65f33e1d5c6a74a520173de6bc3cdc44
https://doi.org/10.2139/ssrn.4348111

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Secondary electron emission model for photo-emission from metals in the vacuum ultraviolet

Autor: Ai-Gen Xie, Yi-Fan Liu, Hong-Jie Dong

Publikováno v: Nuclear Science and Techniques. 33

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4683b5e47f291513a1a734e1b4f8feb1
https://doi.org/10.1007/s41365-022-01088-w

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Secondary electron emission and photoemission from a negative electron affinity semiconductor with large mean escape depth of excited electrons

Autor: Ai-Gen Xie, Hong-Jie Dong, Yi-Fan Liu

Publikováno v: Chinese Physics B. 32:048102

The formulae for parameters of a negative electron affinity semiconductor (NEAS) with large mean escape depth of secondary electrons λ (NEASLD) are deduced. The methods for obtaining parameters such as λ, B, E pom and the maximum δ and δ at 100.0

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7b555f6b8f912d1c21d7cbd938437ffa
https://doi.org/10.1088/1674-1056/ac7dbd

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