Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Hong-Jhang Syu"'
Publikováno v:
IEEE Photonics Journal, Vol 13, Iss 2, Pp 1-7 (2021)
In this work, the design and fabrication of a Cu/p-Si/Pt Schottky photodetector with a simple structure is investigated. The mechanism of electron flow is explained using internal photoemission theory, which is further applied to make the fabricated
Externí odkaz:
https://doaj.org/article/7689498b2f30413886219bb8d183b432
Autor:
Chen-Chih Hsueh, Subramani Thiyagu, Chien-Ting Liu, Hong-Jhang Syu, Song-Ting Yang, Ching-Fuh Lin
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-12 (2019)
Abstract In this study, we fabricate uniform silicon nanowire (SiNW) arrays on 6-inch mono- and multi-crystalline wafers by employing the improved solution-processed metal-assisted chemical etching (MacEtch) method. Furthermore, the improved MacEtch
Externí odkaz:
https://doaj.org/article/966e6bfbf92f4b44b771a8ed2c81fd46
Publikováno v:
Energies, Vol 12, Iss 21, p 4119 (2019)
This paper experimentally demonstrates the benefits of combining an up-conversion (UC) layer containing Yb/Er-doped yttrium oxide-based phosphors with a plasmonic scattering layer containing indium nanoparticles (In-NPs) in enhancing the photovoltaic
Externí odkaz:
https://doaj.org/article/9b1b815d3fdd4022b314d0c59ed39e18
Autor:
Ruei-Lien Sun, Hsin-Han Lai, Zih-Chun Su, Yao-Han Dong, Bo-Heng Chen, Deepali Sinha, Hong-Jhang Syu, Ching-Fuh Lin
Publikováno v:
Optics & Laser Technology. 166:109613
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fa86b1305f8133b49fb70270e2567e6
https://doi.org/10.1016/j.optlastec.2023.109613
https://doi.org/10.1016/j.optlastec.2023.109613
Publikováno v:
IEEE Transactions on Electron Devices. 69:205-211
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f72ea8082053ac345124a8be08e0e2f3
https://doi.org/10.1109/ted.2021.3130566
https://doi.org/10.1109/ted.2021.3130566
Publikováno v:
IEEE Photonics Journal, Vol 13, Iss 2, Pp 1-7 (2021)
In this work, the design and fabrication of a Cu/p-Si/Pt Schottky photodetector with a simple structure is investigated. The mechanism of electron flow is explained using internal photoemission theory, which is further applied to make the fabricated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e71a6003c75d854c28e45683feef333f
https://doi.org/10.1109/jphot.2021.3064068
https://doi.org/10.1109/jphot.2021.3064068
Publikováno v:
2021 IEEE Research and Applications of Photonics in Defense Conference (RAPID).
Here, inverted-pyramid array structures (IPAS) are applied on NiSi/n-Si Schottky photodetectors to generate surface plasmon resonance and improve the photoresponse in mid-infrared region. Consequently, compared with the planar devices, the current re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09693d7ba54c13f9adaee4d3e39d9458
https://doi.org/10.1109/rapid51799.2021.9521452
https://doi.org/10.1109/rapid51799.2021.9521452
Publikováno v:
Infrared Technology and Applications XLVII.
Nowadays, infrared (IR) photodetectors are mainly made from compound semiconductors due to the bandgap flexibility. However, compound semiconductors are mostly synthesized by expensive and energy-intensive epitaxy processes. Moreover, compound semico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1672f06e79557569d0d49dbd548dd5ed
https://doi.org/10.1117/12.2586050
https://doi.org/10.1117/12.2586050
Publikováno v:
Physics and Simulation of Optoelectronic Devices XXIX.
Nowadays, compound semiconductors are the main approach to detect mid-infrared (IR) light, such as HgCdTe and InAsSb, due to the bandgap tunability compared with Si. However, the epitaxy processes are expensive and energy-intensive. Also, compound de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c50ddf051e62ac2319579998bbb1e975
https://doi.org/10.1117/12.2578656
https://doi.org/10.1117/12.2578656
Publikováno v:
Infrared Sensors, Devices, and Applications X.
Infrared (IR) photodetector is widespread applied to spectroscopy, biosensing, and image detection. Nowadays, most of IR photodetectors are prepared from compound semiconductors, for example, SiGe, HgCdTe, and InSb. However, most of them are formed t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e0d6d5815594b7760a92d58626b7457
https://doi.org/10.1117/12.2568354
https://doi.org/10.1117/12.2568354