Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Hong-Chuan Wang"'
Autor:
Nan-Nan Li, Hong-Chuan Wang, Jia-Yu Li, Wei He, Hua-Peng Xue, Tian-Heng Gao, Zhe Zhao, Dao-Feng Zhang
Publikováno v:
Antonie van Leeuwenhoek. 116:487-497
Publikováno v:
Physical Review B. 95
Quantum anomalous Hall (QAH) insulator is a topological phase which exhibits chiral edge states in the absence of magnetic field. The celebrated Haldane model is the first example of QAH effect, but difficult to realize. Here, we predict the two-dime
Publikováno v:
Applied Mechanics and Materials. :2208-2212
In this article, the Lathe Bed of DL20-MST CNC machine tool is taken as the research object. The response surface method and optimization design of goal-driven are introduced. Combining the two methods, the size optimization design method of the Lath
Publikováno v:
Advanced Materials Research. :999-1004
This paper discusses effect of shielding lines on reduction of electric field produced by overhead lines. Charge simulation method is used. Influences of height, space and number of shielding lines on electric field are calculated. Space between shie
Publikováno v:
2011 IEEE International Conference on Computer Science and Automation Engineering.
The energy consumption and the lifetime in wireless sensor network (WSN) can be investigated from the perspective of network topology division. A connected key nodes discovering algorithm based on loop detection between neighbor nodes was proposed in
Publikováno v:
Foot & Ankle International; Nov2010, Vol. 31 Issue 11, p959-964, 6p, 8 Black and White Photographs
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:853
Scanning tunneling microscopy has been used to study submonolayer coverages of titanium oxide on rhodium. After reduction with CO, titania is shown to form one atomic layer thick islands ∼20 A in size on the Rh(111) surface at submonolayer coverage
Publikováno v:
Physical Review B. 36:7712-7714
The $c(4\ifmmode\times\else\texttimes\fi{}4)$ reconstruction of Si(100) clean surface has been obtained by suitable thermal annealing within the temperature range of 580-630\ifmmode^\circ\else\textdegree\fi{}C. The structure transition between $c(4\i
Studies of the High Temperature Nitridation Structures of the Si(111) Surface by LEED, AES and EELFS
Publikováno v:
Springer Series in Surface Sciences ISBN: 9783642733451
It is well known that the silicon nitride film can be used as a passive film in IC technology. Since 1980 the structure of silicon nitride layers has been studied by several groups [1,2,3]. In this paper, the nitridation structure of the Si(111) surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d537cd156907e6719b5b7b09f7f27de
https://doi.org/10.1007/978-3-642-73343-7_62
https://doi.org/10.1007/978-3-642-73343-7_62
Publikováno v:
Surface Science Letters. 188:A357
The initial nitridation structures of the Si(111) surface have been studied by electron energy loss fine structure (EELFS). From the values of the bond lengths between the nitrogen atoms and their nearest silicon atoms obtained by the experimental me