Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Hong-Chang Hsieh"'
Autor:
Hong-Chang Hsieh, Yun-Hen Liu, Chee-Jen Chang, Kuo-Chin Kao, Po-Jen Ko, Ching-Feng Wu, Hao-Jui Li, Ching-Yang Wu, Han-Chung Hu, Sheng-Yueh Yu, Jui-Ying Fu, Tsung-Chi Kao
Publikováno v:
Annals of surgery. 255(5)
To identify the risk factors leading to catheter malfunction.Reliable venous access is crucial for cancer patients. Malfunction of intravenous ports may lead to discontinuation of treatment and repeated interventions. We retrospectively reviewed the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e7a3e8f2470e8bc4aa2d8f2e6729ac6
https://pubmed.ncbi.nlm.nih.gov/22504196
https://pubmed.ncbi.nlm.nih.gov/22504196
Autor:
Ta-Wei Su, Ching-Feng Wu, Jui-Ying Fu, Po-Jen Ko, Sheng-Yueh Yu, Tsung-Chi Kao, Hong-Chang Hsieh, Ching-Yang Wu
Publikováno v:
Medicine; May2015, Vol. 94 Issue 17, p1-5, 5p
Autor:
Hong-Chang Hsieh, Ta-Wei Su, Sheng-Yueh Yu, Jui-Ying Fu, Tsung-Chi Kao, Po-Jen Ko, Ching-Feng Wu, Ching-Yang Wu
Publikováno v:
Medicine. 94:e728
An entry vessel is crucial for intravenous port implantation. A safe alternative entry vessel that can be easily explored is crucial for patients without feasible cephalic vein or for those who need port reimplantation because of disease relapse. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea6b3b1932080c3adf0ddcc0f95e6b20
https://doi.org/10.1097/md.0000000000000728
https://doi.org/10.1097/md.0000000000000728
Autor:
Hong-chang Hsieh, 謝宏昌
95
This article investigates the arbitrage function and price discovery in agricultural futures and spot prices. Using monthly data and multi-variable threshold model (MVTAR), we find that agricultural future and spot markets have a cointegratio
This article investigates the arbitrage function and price discovery in agricultural futures and spot prices. Using monthly data and multi-variable threshold model (MVTAR), we find that agricultural future and spot markets have a cointegratio
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/75984570365682596181
Autor:
Jaw-Jung Shin, Ru-Gun Liu, Burn Jeng Lin, Angus Chin, Hong-Chang Hsieh, Johnson Chang-Cheng Hung, Sheng-Cha Lee
Publikováno v:
SPIE Proceedings.
In the IC industry the mask cost and cycle time have increased dramatically since the chip design has become more complex and the required mask specification, tighter. The lithography technology has been driven to 65-nm node and 90-nm product will be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0934a376279ca9b5c8b8d2c38fd3414a
https://doi.org/10.1117/12.504288
https://doi.org/10.1117/12.504288
Autor:
Shih-Ming Chang, Chih-Cheng C. Chin, Hong-Chang Hsieh, Wen-Chuan Wang, Sheng-Chi J. Chin, Chi-Lun Lu
Publikováno v:
SPIE Proceedings.
Nowadays, the CD (Critical Dimension) control on masks manufacturing plays an important role in photolithography process for 90-nm node technology and below. The process performance of photolithography will degrade severely even when the mask CD erro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d5dc047807b369e1efb655fea191c34
https://doi.org/10.1117/12.504193
https://doi.org/10.1117/12.504193
Autor:
Yuval Blumberg, Hong-Chang Hsieh, Anja Rosenbusch, Reuven Falah, Luke T. H. Hsu, Johnson Chang-Cheng Hung
Publikováno v:
SPIE Proceedings.
Inspection of aggressive OPC represents one of the major challenges for today's mask inspection methodologies. Systems are phased with high-density layouts, containing OPC features far below the resolution limit of conventional inspection systems. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28144cb711aa7a9267b01480fe9b4784
https://doi.org/10.1117/12.504058
https://doi.org/10.1117/12.504058
Autor:
Chun-Kuang Chen, Chih-Ming Ke, Anthony Yen, Yao-Ching Ku, Shinn-Sheng Yu, Bang-Ching Ho, Hong-Chang Hsieh, Jacky Huang, T. S. Gau, Burn Jeng Lin
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 4:043003
The functional dependence of a resist critical dimension (CD) with respect to resist thickness for a general absorptive thin-film stack in the case of oblique incidence is derived analytically with the rigorous electromagnetic theory. Based on obtain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9428c66d9621bf5f3a17f3b4a011514
https://doi.org/10.1117/1.2137967
https://doi.org/10.1117/1.2137967
Publikováno v:
Journal of Morphological Sciences. 2021, Vol. 38, p51-56. 6p.
Autor:
Pai, Mangala M.1, Blossom, Vandana1, Prabhu, Latha V.1, Murlimanju, B. V.1 flutemist@gmail.com
Publikováno v:
Journal of Morphological Sciences. 2022, Vol. 39, p103-105. 3p.