Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Hong Nien Lin"'
Autor:
Wen-Chin Lee, Hong-Nien Lin, Tzu-Juei Wang, Shoou-Jinn Chang, Chih-Hsin Ko, San-Lein Wu, Ta-Ming Kuan
Publikováno v:
IEEE Transactions on Electron Devices. 55:3221-3226
Extrinsic source/drain series resistance (R SD) is becoming inevitably dominant in state-of-the-art CMOS technologies as the intrinsic device resistance continues to scale with channel length dictated by the Moore's Law. As a result, advanced scaling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bae6f1f31413a344e7c72d6ac39cabc7
https://doi.org/10.1109/ted.2008.2004245
https://doi.org/10.1109/ted.2008.2004245
Autor:
Horng-Chih Lin, Tiao Yuan Huang, Hung-Wei Chen, Chih-Hsin Ko, Hong-Nien Lin, Chung-Hu Ge, Wen-Chin Lee
Publikováno v:
IEEE Electron Device Letters. 27:659-661
The correlation between channel mobility gain (Deltamu), linear drain-current gain (DeltaIdlin), and saturation drain-current gain (DeltaIdsat) of nanoscale strained CMOSFETs are reported. From the plots of DeltaIdlin versus DeltaIdsat and ballistic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49f28688006e211b8f486b962fb660d5
https://doi.org/10.1109/led.2006.878035
https://doi.org/10.1109/led.2006.878035
Autor:
Chung-Hu Ge, Hong-Nien Lin, Tiao Yuan Huang, Hung-Wei Chen, Horng-Chih Lin, Wen-Chin Lee, Chih-Hsin Ko
Publikováno v:
IEEE Electron Device Letters. 26:676-678
Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs are reported for the first time. Channel backscattering ratio increases and decreases under uniaxial tensile and compressive strain, respectively. It is found that in su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5748492d729ceee39b72047e56c68432
https://doi.org/10.1109/led.2005.853640
https://doi.org/10.1109/led.2005.853640
Autor:
Jan-Tsai Liu, Tiao Yuan Huang, Hong-Nien Lin, Meng-Fan Wang, Horng-Chih Lin, Fu-Ju Hou, Chia Yu Lu
Publikováno v:
IEEE Electron Device Letters. 24:102-104
A simplified and improved Schottky-barrier metal-oxide-semiconductor device featuring a self-aligned offset channel length, PtSi Schottky junction, and reduced oxide thickness underneath the sub-gate was proposed and demonstrated. To alleviate the dr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd1f81740d5f5cc1ffb8522272a89282
https://doi.org/10.1109/led.2002.807717
https://doi.org/10.1109/led.2002.807717
III-V devices featuring Si transistor-like process and its heterogeneous integration on Si substrate
Publikováno v:
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications.
High mobility III-V compound semiconductors are the most attractive candidates who could provide enhanced performance for future logic applications. Even so, people still hesitate to accelerate III-V materials entering into Si CMOS world. To relieve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::206e932f55c2ec2aa9f55ba9fc96a539
https://doi.org/10.1109/vtsa.2011.5872240
https://doi.org/10.1109/vtsa.2011.5872240
Autor:
Chia-Cheng Ho, Liang-Gi Yao, Tsu-Hsiu Perng, Chia-Pin Lin, Chu-Yun Fu, Chia-Feng Hu, Chih-Hao Chang, Chia-Cheng Chen, Ta-Ming Kuan, Hun-Jan Tao, Ting-Chu Ko, Shyue-Shyh Lin, Shih-Ting Hung, Neng-Kuo Chen, Chen Tzu-Chiang, Ching-Yu Chan, Hong-Nien Lin, Ming-Feng Shieh, Hsien-Chin Lin, Clement Hsingjen Wann, Tsung-Lin Lee, Shu-Ting Yang, M. Cao, Chih-Chieh Yeh, H. C. Lin, Jeff J. Xu, Shih-Cheng Chen, Chih-Sheng Chang, Li-Shyue Lai, Jyh-Cheng Sheu, Wei-Hsiung Tseng, Feng Yuan, C.H. Chang
Publikováno v:
2010 International Electron Devices Meeting.
We show that FinFET, a leading transistor architecture candidate of choice for high performance CPU applications [1–3], can also be extended for general purpose SoC applications by proper device optimization. We demonstrate superior, best-in-its-cl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71e100479e1546404055154726f5e6d8
https://doi.org/10.1109/iedm.2010.5703473
https://doi.org/10.1109/iedm.2010.5703473
Publikováno v:
2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
A simple yet effective approach for the extraction of source/drain (S/D) series resistance RSD using mechanical four-point bending is presented. This new approach can be used to extract the RSD of each device disregarding its channel length. Accordin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b0d5846cada2646bf1727359471ebdc
https://doi.org/10.1109/vtsa.2007.378920
https://doi.org/10.1109/vtsa.2007.378920
Autor:
Horng-Chih Lin, Chung-Hu Ge, Tiao Yuan Huang, Hong-Nien Lin, Wen-Chin Lee, Chih-Hsin Ko, Hung-Wei Chen
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
Channel backscattering ratios of PMOSFETs with various embedded SiGe source/drain structures are analyzed in terms of the scattering theory. We found that both the backscattering ratio and injection velocity are greatly influenced by the location and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f9ff879af28e8c5deef0db97fc4c50c
https://doi.org/10.1109/iedm.2005.1609289
https://doi.org/10.1109/iedm.2005.1609289
Autor:
Hong-Nien Lin, Chih-Hsin Ko, Hung-Wei Chen, Horng-Chih Lin, Tiao Yuan Huang, Chung-Hu Ge, Wen-Chin Lee
Publikováno v:
2006 International Symposium on VLSI Technology, Systems, and Applications.
The channel backscattering ratios as well as the ballistic efficiency of strained CMOSFETs were studied for both nondegenerate and degenerate-limited cases. We found that the simple nondegenerate assumption can predict strain-induced change of ballis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::887d0957d9ecddc177d1a13c87454d93
https://doi.org/10.1109/vtsa.2006.251067
https://doi.org/10.1109/vtsa.2006.251067
Autor:
Hong-Nien Lin, 林宏年
95
In this dissertation, we primarily investigate the impact of process-induced uniaxial strain of CMOSFETs on low-field carrier transport and high-field channel backscattering phenomenon. By utilizing the temperature power-dependence of drain c
In this dissertation, we primarily investigate the impact of process-induced uniaxial strain of CMOSFETs on low-field carrier transport and high-field channel backscattering phenomenon. By utilizing the temperature power-dependence of drain c
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/45733634265399167469
