Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Hong Ming Wu"'
Autor:
Hong Ming Wu, 吳鴻銘
91
In this study, we discussed the diseases of aorta induce variety of the wall shear stress and investigated physics behavior of blood flow. We use CFX5 to build computational grids. The MRI outline of dissected aorta was provided by Taiwan Uni
In this study, we discussed the diseases of aorta induce variety of the wall shear stress and investigated physics behavior of blood flow. We use CFX5 to build computational grids. The MRI outline of dissected aorta was provided by Taiwan Uni
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/17400692473012813015
Publikováno v:
Taiwanese Journal of Obstetrics & Gynecology, Vol 52, Iss 4, Pp 512-515 (2013)
Objective: This study investigated the occurrence of peritoneal fluid in women undergoing intrauterine insemination (IUI) and its correlation with the stage of pelvic endometriosis and its influence on pregnancy outcomes. Materials and Methods: A ret
Externí odkaz:
https://doaj.org/article/dafac6ae517d4403897bdc2f9c1fbcaf
Autor:
Tian Ci Chen, jianbing guo, Fangchang Lin, Hong Ming Wu, Deng Feng Zhou, Ying Zhou, Ji Ling Song
Publikováno v:
SSRN Electronic Journal.
Autor:
Xingfu Zi, Hong Ming Wu, Dinghong Xu, Weidi He, Ji Ling Song, Ying Zhou, jianbing guo, Wei Yan
Publikováno v:
SSRN Electronic Journal.
Publikováno v:
Journal of Applied Physics; 2016, Vol. 119 Issue 11, p1-6, 6p, 2 Diagrams, 1 Chart, 4 Graphs
Publikováno v:
Taiwanese Journal of Obstetrics & Gynecology, Vol 47, Iss 2, Pp 250-251 (2008)
Externí odkaz:
https://doaj.org/article/5bd685dc2d5f4f5b9019fd6f81bf6c20
Publikováno v:
Acta Crystallographica Section C Structural Chemistry. 72:416-420
Vanadium chemistry is of interest due its biological relevance and medical applications. In particular, the interactions of high-valent vanadium ions with sulfur-containing biologically important molecules, such as cysteine and glutathione, might be
Publikováno v:
Thin Solid Films. 570:390-393
We report on the structural properties of ordering InGaP directly deposited on (001) Ge substrate by organometallic vapor phase epitaxy. The Ge substrate is 6° miscut towards (110). Results from transmission electron diffraction indicate the existen
Publikováno v:
2016 5th International Symposium on Next-Generation Electronics (ISNE).
We report on the structural and electronic properties of a series of GaAs1−xNx with wide x range. The alloys were grown on (001) GaAs substrate using plasma-assisted molecular beam epitaxy. Transmission electron microscopy and selective area electr