Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Hong Kyw Choi"'
Autor:
Mohd.Musaib Haidari, Dong Jin Jang, Duhee Yoon, Hakseong Kim, Hong Kyw Choi, Yoonsik Yi, Jin Hong Kim, Jin‐Yong Ko, Dooho Lee, Eun Hee Kee, Hu Young Jeong, Jeong Young Park, Bae Ho Park, Jin Sik Choi
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 5, Pp n/a-n/a (2024)
Abstract A method for patterning single‐layer graphene (SLG) and single‐layer oxidized graphene (SOG) within a continuous atomic layer to form lateral heterojunctions is presented. Raman spectroscopy is employed to investigate the evolution of de
Externí odkaz:
https://doaj.org/article/405b4662cba04e438fa0c6545a44e6b2
Autor:
Hong Kyw Choi, Jaesung Park, Oh Hun Gwon, Jong Yun Kim, Seok-Ju Kang, Hye Ryung Byun, BeomKyu Shin, Seo Gyun Jang, Han Seul Kim, Young-Jun Yu
Publikováno v:
ACS Applied Materials & Interfaces. 14:23617-23623
In this work, we develop a gate-tunable gas sensor based on a MoS
Autor:
Tae Kyoung, Kim, Yeo Jin, Yoon, Seung Kyu, Oh, Yu-Jung, Cha, In Yeol, Hong, Moon Uk, Cho, Chan-Hwa, Hong, Hong Kyw, Choi, Joon Seop, Kwak
Publikováno v:
Journal of nanoscience and nanotechnology. 18(9)
In order to improve EQE, we have investigated on the role of multilayer graphene (MLG) on the electrical and optical properties of GaN based light-emitting diodes (LEDs) with ultrathin ITO (5 nm or 10 nm)/p-GaN contacts. The MLG was transferred on th
Autor:
Sung-Yool Choi, Jong Tae Lim, Jaehyun Moon, Yongsup Park, Min-Jae Maeng, Jeong-Ik Lee, Jin-Wook Shin, Hong Kyw Choi, Jun-Han Han, Nam Sung Cho, Jaewon Seo, Seung Koo Park, Hyunsu Cho, Ji-Hoon Kim
Publikováno v:
Diamond and Related Materials. 57:68-73
Optical, interfacial and patterning issues of anode graphene films in organic light emitting diode (OLED) applications were investigated. In the optical part, the microcavities of graphene and indium tin oxide (ITO) anode OLEDs were contrasted. With
Publikováno v:
Journal of the Korean Society of Marine Engineering. 33:131-137
In this paper, we have manufactured hole type PRAM unit cell using phase change material . The phase change material was deposited on hole of 500 nm size using sputtering method. Reset current of PRAM unit cell was confirmed by measuring R-V characte
Publikováno v:
Journal of the Korean Society of Marine Engineering. 32:162-168
In this paper, we analyzed the heat transfer phenomenon and the reset current variation of PRAM device with thickness of phase change material using the 3-D finite element analysis tool. From the simulation, Joule`s heat was generated at the contact
Autor:
Young-Jun Yu, Jong-Ho Choe, Jong Yun Kim, Oh Hun Gwon, Hong Kyw Choi, Jin Sik Choi, Jin Hong Kim, Jin-Soo Kim, Jin Tae Kim, Jun-Hwan Shin, Young Kyu Choi
Publikováno v:
Nanoscale; 3/21/2019, Vol. 11 Issue 11, p4735-4742, 8p
Autor:
Young Sam Park, Hong Seung Kim, Hong-Kyw Choi, Sung Min Yoon, Seung Yun Lee, Byoung Gon Yu, Nakwon Jang
Publikováno v:
Journal of nanoscience and nanotechnology. 8(10)
In this paper, we have investigated the phase change memory device with U-shaped bottom electrode using three-dimensional finite element analysis tool. From the simulation, the reset current of PRAM with U-shaped bottom electrode is greatly reduced,
Autor:
Hu Young Jeong, Dae-Sik Lee, Hong Kyw Choi, Duck Hyun Lee, Ji-Eun Kim, Jeong Yong Lee, Won Jong Lee, Sang Ouk Kim, Sung-Yool Choi
Publikováno v:
Applied Physics Letters; 5/24/2010, Vol. 96 Issue 21, p213105, 3p