Zobrazeno 1 - 10
of 339
pro vyhledávání: '"Hong‐Liang Lu"'
Autor:
Jia-Meng Yang, Zhi-Hao Cao, Huo-Bin Tang, An-Ni Yang, Jia-Hui Liu, Jin-Hui Zhang, Hong-Liang Lu
Publikováno v:
Ecotoxicology and Environmental Safety, Vol 279, Iss , Pp 116488- (2024)
Organophosphorus flame retardants, such as triphenyl phosphate (TPhP), exist ubiquitously in various environments owing to their widespread usage. Potential toxic effects of residual flame retardants on cultured non-fish species are not concerned com
Externí odkaz:
https://doaj.org/article/a27ba6da5baa4ec693675d4dde39dc6b
Zinc oxide thin film transistor with high UV photoelectric sensitivity for artificial neuro networks
Publikováno v:
Journal of Science: Advanced Materials and Devices, Vol 9, Iss 2, Pp 100689- (2024)
Photosynaptic transistors based on amorphous oxide semiconductors are a potential device to break von Neumann bottleneck due to their low consumption and integration of sensing, storage, and computing. Till now, there has been a lack of studies on th
Externí odkaz:
https://doaj.org/article/e5d76f970c894809b199a200f1294423
Publikováno v:
Animals, Vol 14, Iss 16, p 2388 (2024)
Investigating the physiological and biochemical changes of ectothermic species before entering hibernation would contribute to the understanding of how they adapt to low-temperature environments. Here, red-eared slider turtle (Trachemys scripta elega
Externí odkaz:
https://doaj.org/article/74fa4ae521d444b290eee1bb64460c64
Publikováno v:
AIP Advances, Vol 14, Iss 1, Pp 015105-015105-9 (2024)
Al-doped HfO2 (HAO) is regarded as one of the potential HfO2 ferroelectric materials owing to its compatibility with the front end of the line process in integration circuits. In this work, atomic layer deposited (ALD) HAO thin films with different A
Externí odkaz:
https://doaj.org/article/43d8b473bd814585af5f829c9d2b6a41
Advances in Noble Metal-Decorated Metal Oxide Nanomaterials for Chemiresistive Gas Sensors: Overview
Publikováno v:
Nano-Micro Letters, Vol 15, Iss 1, Pp 1-75 (2023)
Highlights Recent progress in noble metal-decorated (NM-D) semiconducting metal oxides (SMOs) gas sensors are summarized. Gas sensing mechanisms related to noble metal decoration are carefully discussed. Crucial challenges facing the development of N
Externí odkaz:
https://doaj.org/article/d3bcb787f2b94a6080404c1dbfea2480
Autor:
Huiting Peng, Yiping Liu, Yinfeng Shen, Ling Xu, Jicun Lu, Ming Li, Hong-Liang Lu, Liming Gao
Publikováno v:
Molecules, Vol 29, Iss 7, p 1657 (2024)
Efficient sensors for toluene detecting are urgently needed to meet people’s growing demands for both environment and personal health. Metal oxide semiconductor (MOS)-based sensors have become brilliant candidates for the detection of toluene becau
Externí odkaz:
https://doaj.org/article/56a77200486348bb9f7cda38e39a4529
Publikováno v:
Ecotoxicology and Environmental Safety, Vol 267, Iss , Pp 115617- (2023)
The antidiabetic pharmaceutical metformin (MET) is largely unmetabolized by the human body. Its residues are readily detectable in various aquatic environments and may have adverse impacts on the growth and survival of aquatic species. To date, its t
Externí odkaz:
https://doaj.org/article/32b16bb5b3844a4a9a2b52bdb0fe36c8
Publikováno v:
Nano-Micro Letters, Vol 14, Iss 1, Pp 1-42 (2022)
Abstract With the rapid development of the Internet of Things, there is a great demand for portable gas sensors. Metal oxide semiconductors (MOS) are one of the most traditional and well-studied gas sensing materials and have been widely used to prep
Externí odkaz:
https://doaj.org/article/c55e8a108689459396919ceaba5b2223
Publikováno v:
Ecotoxicology and Environmental Safety, Vol 260, Iss , Pp 115095- (2023)
The extensive use of organophosphorus insecticides poses a threat to the survival of non-target organisms. Ecotoxicological outcomes of embryonic exposure to insecticides are rarely evaluated in various oviparous species. In this study, soft-shelled
Externí odkaz:
https://doaj.org/article/89b30453052f48189f7a1e8bc186f430
Autor:
Xiao-Xi Li, Guang Zeng, Yu-Chun Li, Hao Zhang, Zhi-Gang Ji, Ying-Guo Yang, Man Luo, Wei-Da Hu, David Wei Zhang, Hong-Liang Lu
Publikováno v:
npj Flexible Electronics, Vol 6, Iss 1, Pp 1-9 (2022)
Abstract Deep-ultraviolet (DUV) phototransistors have shown great potential applications in UV imaging, artificial intelligence, and wearable optoelectronics. Among a large number of wide bandgap semiconductors, the quasi-two-dimensional β-Ga2O3 is
Externí odkaz:
https://doaj.org/article/7c637e8fd47b4cd2b0ea430216179cce