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Autor:
Honar Salah Ahmed, Yusuf Selim Ocak, Ahmet Tombak, Sezai Asubay, Cihat Bozkaplan, Mustafa Fatih Genisel
Publikováno v:
Optik. 142:644-650
MoS2 is one of the most promising materials due to its exciting properties. Al/MoS2/n–Si heterojunction diode was acquired via the formation of a MoS2 thin film on n–Si semiconductor using radio frequency (RF) sputtering technique and an evaporat