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of 142
pro vyhledávání: '"Homojunction Solar Cells"'
Akademický článek
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Akademický článek
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36th European Photovoltaic Solar Energy Conference and Exhibition; 483-485
In this work we present SIMS and ECV analysis to study the junction profile of selective emitter after a treatment by 532 nm laser. Initial emitter is obtained in low pre
In this work we present SIMS and ECV analysis to study the junction profile of selective emitter after a treatment by 532 nm laser. Initial emitter is obtained in low pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3af74db75b325c47d18a5cf9b4327f67
36th European Photovoltaic Solar Energy Conference and Exhibition; 208-213
Polysilicon (poly-Si) based passivating contacts are promising to improve silicon solar cells conversion efficiency. However, the use of Transparent Conductive Oxides (TC
Polysilicon (poly-Si) based passivating contacts are promising to improve silicon solar cells conversion efficiency. However, the use of Transparent Conductive Oxides (TC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21669444499fe3e4a4fbb84e3d8fcad2
36th European Photovoltaic Solar Energy Conference and Exhibition; 157-160
This work reports the latest results at imec of rear emitter bifacial Passivated Emitter, Rear Totally diffused (PERT) cells, processed on large area (243.3 cm2), 170 µm
This work reports the latest results at imec of rear emitter bifacial Passivated Emitter, Rear Totally diffused (PERT) cells, processed on large area (243.3 cm2), 170 µm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53699c9e8cb8d2cffe39a5a7d9346b82
36th European Photovoltaic Solar Energy Conference and Exhibition; 151-156
Oxygen precipitates can be formed in Czochralski-grown silicon (Cz-Si) wafers during high temperature processes. They decrease the bulk charge carrier lifetime and thereb
Oxygen precipitates can be formed in Czochralski-grown silicon (Cz-Si) wafers during high temperature processes. They decrease the bulk charge carrier lifetime and thereb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63c996e68ce6ac749748d2bad0422f22
36th European Photovoltaic Solar Energy Conference and Exhibition; 192-195
We propose a new approach of ex-situ doping for poly-Si passivated contacts, involving PECV-deposited SiOxNy:B or SiNx:P as doping layers. This approach provides excellen
We propose a new approach of ex-situ doping for poly-Si passivated contacts, involving PECV-deposited SiOxNy:B or SiNx:P as doping layers. This approach provides excellen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f583569b39cb464952bc2208e545adf
36th European Photovoltaic Solar Energy Conference and Exhibition; 180-183
We present our results on obtaining a higher throughput for an LPCVD polysilicon process that incorporates both in-situ tunnel oxide formation and in-situ n-type doping a
We present our results on obtaining a higher throughput for an LPCVD polysilicon process that incorporates both in-situ tunnel oxide formation and in-situ n-type doping a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cb53e6f1caa3784f2fe2e75c15cb5c7
Publikováno v:
36th European Photovoltaic Solar Energy Conference and Exhibition, Marseille, France, 9-13 September 2019
36th European Photovoltaic Solar Energy Conference and Exhibition; 201-204
We present new ways to characterize, analyze and improve the patterning process of doped polysilicon (polySi) for application as passivating contacts for 6’’ high-eff
We present new ways to characterize, analyze and improve the patterning process of doped polysilicon (polySi) for application as passivating contacts for 6’’ high-eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0bc75591a27ebca079fd4fd329c73833
36th European Photovoltaic Solar Energy Conference and Exhibition; 492-495
In our previous work, we demonstrated that an average efficiency of mass production of 21.35 % with the best efficiency of 21.70 % was achieved by using our unique printe
In our previous work, we demonstrated that an average efficiency of mass production of 21.35 % with the best efficiency of 21.70 % was achieved by using our unique printe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34aa36c03c39c43585eecb59e85e37af