Zobrazeno 1 - 10
of 232
pro vyhledávání: '"Hommel, Detlef"'
Autor:
Mendoza-Rodarte, J. Aaron, Gas, Katarzyna, Herrera-Zaldívar, Manuel, Hommel, Detlef, Sawicki, Maciej, Guimarães, Marcos H. D.
Diluted magnetic semiconductors (DMS) have attracted significant attention for their potential in spintronic applications. Particularly, magnetically-doped GaN is highly attractive due to its high relevance for the CMOS industry and the possibility o
Externí odkaz:
http://arxiv.org/abs/2405.08519
Improved-Sensitivity Integral SQUID Magnetometry of (Ga,Mn)N Thin Films in Proximity to Mg-doped GaN
Autor:
Gas, Katarzyna, Kunert, Gerd, Dluzewski, Piotr, Jakiela, Rafal, Hommel, Detlef, Sawicki, Maciej
Publikováno v:
Journal of Alloys and Compounds 868, 159119 (2021)
Nominally 45 nm GaN:Mg/ 5 nm (Ga,Mn)N / 45 nm GaN:Mg trilayers structures prepared by molecular beam epitaxy on GaN-buffered Al2O3 substrates are investigated to verify whether the indirect co-doping by holes from the cladding layers can alter the sp
Externí odkaz:
http://arxiv.org/abs/2101.09804
Publikováno v:
Journal of Alloys and Compounds 2019
Recent interest in very thin single phase Ga1-xMnxN dilute magnetic layers increased needs for precise, non-destructive, and relatively fast characterization methods with key issues being the macroscopic lateral Mn distribution and the absolute value
Externí odkaz:
http://arxiv.org/abs/1911.02958
Akademický článek
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Autor:
Kalbarczyk, Karolina, Dybko, Krzysztof, Gas, Katarzyna, Sztenkiel, Dariusz, Foltyn, Marek, Majewicz, Magdalena, Nowicki, Piotr, Łusakowska, Elżbieta, Hommel, Detlef, Sawicki, Maciej
Publikováno v:
Journal of Alloys and Compounds, 804 (2019),p. 415-420
Schottky barrier height and the ideality factor $\eta$ are established for the first time in the single phase (Ga,Mn)N using a vertical geometry device. The material has been heteroepitaxially grown on commercially available low threading dislocation
Externí odkaz:
http://arxiv.org/abs/1907.09757
Autor:
Gacka, Ewelina, Kunicki, Piotr, Łysik, Paulina, Gajewski, Krzysztof, Ciechanowicz, Paulina, Pucicki, Damian, Majchrzak, Dominika, Gotszalk, Teodor, Piasecki, Tomasz, Busani, Tito, Rangelow, Ivo W., Hommel, Detlef
Publikováno v:
In Ultramicroscopy June 2023 248
Akademický článek
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Autor:
Gas, Katarzyna, Domagala, Jaroslaw Z., Jakiela, Rafal, Kunert, Gerd, Dluzewski, Piotr, Piskorska-Hommel, Edyta, Paszkowicz, Wojciech, Sztenkiel, Dariusz, Winiarski, Maciej J., Kowalska, Dorota, Szukiewicz, Rafal, Baraniecki, Tomasz, Miszczuk, Andrzej, Hommel, Detlef, Sawicki, Maciej
Publikováno v:
J. Alloys Compd. 747, 946 (2018)
A range of high quality Ga1-xMnxN layers have been grown by molecular beam epitaxy with manganese concentration 0.2 < x < 10%, having the x value tuned by changing the growth temperature (Tg) between 700 and 590 {\deg}C, respectively. We present a sy
Externí odkaz:
http://arxiv.org/abs/1803.03308
Autor:
Majchrzak, Dominika, Gorantla, Sandeep, Zdanowicz, Ewelina, Pieniążek, Agnieszka, Serafińczuk, Jarosław, Moszak, Karolina, Pucicki, Damian, Grodzicki, Miłosz, Kowalski, Bogdan J., Kudrawiec, Robert, Hommel, Detlef
Publikováno v:
In Vacuum August 2022 202
Autor:
Majchrzak, Dominika, Grodzicki, Miłosz, Moszak, Karolina, Zdanowicz, Ewelina, Serafińczuk, Jarosław, Pucicki, Damian, Kudrawiec, Robert, Hommel, Detlef
Publikováno v:
In Surfaces and Interfaces December 2021 27