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Publikováno v:
In Journal of Crystal Growth 2005 284(3):353-368
Autor:
McCallum, Kirk D., Brock, Alexander W., Banan, Mohsen, Falster, Robert J., Holzer, Joseph C., Johnson, Bayard K., Bum Kim, Chang, Kimbel, Steven L., Lu, Zheng, Metti, Paolo, Voronkov, Vladimir V., Mule Stagno, Luciano, Libbert, Jeffrey L.
The present invention relates to a process for growing a single crystal silicon ingot, which contains an axially symmetric region having a predominant intrinsic point defect and which is substantially free of agglomerated intrinsic point defects in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3549::50f975f75389a1c378e7677eaa8487c3
