Interactive Panel on Perspectives and Practical Skills for Men as Advocates for Gender Equity.

Autor: Genalo, Lawrence J., Green, Roger A., Holloway, Beth M., Holmes Jr., Archie L., Kirkmeyer, Brian P.

Publikováno v: Proceedings of the ASEE Annual Conference & Exposition; 2015, p1-19, 19p

Low noise telcommunications APDs.

Autor: Holmes Jr., Archie L., Campbell, Joe C., Sun, Xiaoguang, Wang, Shuling, Sidhu, Rubin, Zheng, Xiaoguang G., Li, Xiaowei

Publikováno v: Proceedings of SPIE; Nov2003, Issue 1, p247-257, 11p

Carrier dynamics in InP-based PIN photodiodes with InGaAs/GaAsSb type-II quantum wells.

Autor: Baile Chen, Holmes Jr, Archie L

Publikováno v: Journal of Physics D: Applied Physics; 2013, Vol. 46 Issue 31, p1-5, 5p

Role of ion damage on unintentional Ca incorporation during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides using N2/Ar source gas mixtures.

Autor: Oye, Michael M., Bank, Seth R., Ptak, Aaron J., Reedy, Robert C., Goorsky, Mark S., Holmes Jr., Archie L.

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; May/Jun2008, Vol. 26 Issue 3, p1058-1063, 6p, 4 Graphs

Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80 nm) Si1-xGex step-graded buffer layers for high-κ III-V metal-oxide-semiconductor field effect transistor applications.

Autor: Oye, Michael M., Shahrjerdi, Davood, Ok, Injo, Hurst, Jeffrey B., Lewis, Shannon D., Dey, Sagnik, Kelly, David Q., Joshi, Sachin, Mattord, Terry J., Xiaojun Yu, Wistey, Mark A., Harris Jr., James S., Holmes Jr., Archie L., Lee, Jack C., Banerjeeb, Sanjay K.

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; May/Jun2007, Vol. 25 Issue 3, p1098-1102, 5p, 1 Color Photograph, 1 Diagram, 2 Graphs