Zobrazeno 1 - 10
of 251
pro vyhledávání: '"Hollenbach M."'
Autor:
Hollenbach, M., Klingner, N., Mazarov, P., Pilz, W., Nadzeyka, A., Mayer, F., Abrosimov, N. V., Bischoff, L., Hlawacek, G., Helm, M., Astakhov, G. V.
Carbon implantation at the nanoscale is highly desired for the engineering of defect-based qubits in a variety of materials, including silicon, diamond, SiC and hBN. However, the lack of focused carbon ion beams does not allow for the full disclosure
Externí odkaz:
http://arxiv.org/abs/2404.19592
Publikováno v:
Phys. Rev. Applied 22, 044021 (2024)
The long-lived and optically addressable high-spin state of the negatively charged silicon vacancy ($\mathrm{V_{Si}}$) in silicon carbide makes it a promising system for applications in quantum technologies. Most studies of its spin dynamics have bee
Externí odkaz:
http://arxiv.org/abs/2404.07915
Autor:
Hollenbach, M., Kasper, C., Erb, D., Bischoff, L., Hlawacek, G., Kraus, H., Kada, W., Ohshima, T., Helm, M., Facsko, S., Dyakonov, V., Astakhov, G. V.
Publikováno v:
Adv. Funct. Mater. 23, 2313413 (2024)
There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, n
Externí odkaz:
http://arxiv.org/abs/2310.18843
Publikováno v:
Phys. Rev. Appl. 20, 034017 (2023)
The long-lived and optically addressable spin states of silicon vacancies ($\mathrm{V}_\mathrm{Si}$) in 4H-SiC make them promising qubits for quantum communication and sensing. These color centers can be created in both the hexagonal (V1) and in the
Externí odkaz:
http://arxiv.org/abs/2212.07704
Autor:
Hollenbach, M., Klingner, N., Jagtap, N. S., Bischoff, L., Fowley, C., Kentsch, U., Hlawacek, G., Erbe, A., Abrosimov, N. V., Helm, M., Berencén, Y., Astakhov, G. V.
Publikováno v:
Nat. Commun. 13, 7683 (2022)
A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same sil
Externí odkaz:
http://arxiv.org/abs/2204.13173
Autor:
Breev, I. D., Shang, Z., Poshakinskiy, A. V., Singh, H., Berencén, Y., Hollenbach, M., Nagalyuk, S. S., Mokhov, E. N., Babunts, R. A., Baranov, P. G., Suter, D., Tarasenko, S. A., Astakhov, G. V., Anisimov, A. N.
Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon interface are crucial for the realization of quantum sensing protocol
Externí odkaz:
http://arxiv.org/abs/2107.06989
Publikováno v:
Sci. Adv. 7, eabj5030 (2021)
Hybrid spin-optomechanical quantum systems offer high flexibility, integrability and applicability for quantum science and technology. Particularly, on-chip surface acoustic waves (SAWs) can efficiently drive spin transitions in the ground states (GS
Externí odkaz:
http://arxiv.org/abs/2104.03011
Autor:
Bejarano, M., Goncalves, F. J. T., Hollenbach, M., Hache, T., Hula, T., Berencén, Y., Fassbender, J., Helm, M., Astakhov, G. V., Schultheiss, H.
We report the use of optically addressable spin qubits in SiC to probe the magnetic stray fields generated by a ferromagnetic microstructure lithographically patterned on the surface of a SiC crystal. The stray fields cause shifts in the resonance fr
Externí odkaz:
http://arxiv.org/abs/2009.00347
Publikováno v:
Opt. Express 28, 26111 (2020)
We create and isolate single-photon emitters with a high brightness approaching $10^5$ counts per second in commercial silicon-on-insulator (SOI) wafers. The emission occurs in the infrared spectral range with a spectrally narrow zero phonon line in
Externí odkaz:
http://arxiv.org/abs/2008.09425
Publikováno v:
Phys. Rev. Lett. 125, 107702 (2020)
We report on acoustically driven spin resonances in atomic-scale centers in silicon carbide at room temperature. Specifically, we use a surface acoustic wave cavity to selectively address spin transitions with magnetic quantum number differences of $
Externí odkaz:
http://arxiv.org/abs/2005.00787